Wavelength dependence of laser enhanced plasma etching of semiconductors

Reksten, Grace M.; Holber, W.; Osgood, R. M.
February 1986
Applied Physics Letters;2/24/1986, Vol. 48 Issue 8, p551
Academic Journal
Ultraviolet (350 nm) and visible (514 nm and 647 nm) laser light have been employed to enhance silicon etching and to perform in situ patterning in a plasma reactor containing CF4/O2 or NF3 reactants. The etch rate enhancement is dependent on dopant concentration and laser wavelength. This dependence has been related to the number of photogenerated carriers on the semiconductor surface.


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