Molecular beam epitaxial growth of high quality ZnSe on (100) Si

Park, R. M.; Mar, H. A.
February 1986
Applied Physics Letters;2/24/1986, Vol. 48 Issue 8, p529
Academic Journal
ZnSe films have been grown by molecular beam epitaxy for the first time on argon ion sputtered and annealed (100) Si substrates, the simultaneous sputtering and annealing process being performed at a substrate temperature of 400 °C. The sputtered and annealed Si substrates were atomically clean as determined by Auger electron spectroscopy analysis, and exhibited a streaky, reconstructed (2×1) reflection high-energy electron diffraction (RHEED) pattern. Films grown with both the constituent element (Zn and Se) fluxes set to provide a growth rate of ∼0.6 μm/h at initiation of growth were polycrystalline, the crystallites being strongly oriented in the [111] direction as determined by RHEED observations. Parallel epitaxy, i.e., (100) ZnSe||(100) Si was achieved when the growth rate at initiation of growth was close to zero. Epitaxial ZnSe films exhibited dominant bound excitonic 4.2 K photoluminescence (PL) emission at 2.788 eV (Iz1). The Iz1 peak was also detected in the PL spectra of polycrystalline films; however, its absolute intensity was reduced by over two orders of magnitude.


Related Articles

  • Use of ZnSe as an interlayer for GaAs growth on Si. Bringans, R.D.; Biegelsen, D.K. // Applied Physics Letters;7/13/1992, Vol. 61 Issue 2, p195 

    Investigates the use of zinc selenide (ZnSe) as an interlayer for gallium arsenide (GaAS) molecular beam epitaxial growth on silicon. Uniformity of ZnSe-grown GaAs layers; Comparison of the epitaxial growth modes; Formation of an epitaxial layer with polycrystalline; Impact of slow substrate...

  • Carrier dynamics and emission-line narrowing in n- and p-type molecular-beam grown ZnSe epilayers. Bolger, J.A.; Kar, A.K. // Applied Physics Letters;8/2/1993, Vol. 63 Issue 5, p571 

    Examines the carrier recombination processes in a molecular-beam grown zinc selenide epilayers. Use of a photon-resonant excite-probe in measuring the dynamics of the occupancy; Effects of intra-band relaxation on the diffraction state; Accompaniment of a strong blue photoluminescence during...

  • Efficient doping of nitrogen with high activation ratio into ZnSe using a high-power plasma source. Kimura, K.; Miwa, S. // Applied Physics Letters;1/6/1997, Vol. 70 Issue 1, p81 

    Proposes a high-power plasma source for nitrogen doping in zinc selenide molecular beam epitaxy. Presence of a dominant atomic-like emissions around 800 nanometer; Value of the obtained activation ratio; Rise of the intensities of the emissions with increasing relative frequency power.

  • In situ real-time determination of the free-carrier density in doped ZnSe films during molecular.... Rouleau, C.M.; Park, R.M. // Applied Physics Letters;6/1/1992, Vol. 60 Issue 22, p2723 

    Examines the in situ determination of free-carrier density in doped zinc selenide (ZnSe) films during molecular beam epitaxial growth. Evidence on the characteristic blue/green cathodoluminescence emission; Analysis on doped ZnSe films using the reflection high energy electron diffraction...

  • Optically detected magnetic resonance of deep centers in molecular beam epitaxy ZnSe:N. Murdin, B.N.; Cavenett, B.C.; Pidgeon, C.R.; Simpson, J.; Hauksson, I.; Prior, K.A. // Applied Physics Letters;10/25/1993, Vol. 63 Issue 17, p2411 

    Investigates the deep level recombination processes in zinc selenide grown by molecular beam epitaxy and doped with nitrogen. Anisotropic resonances manifested by the centers; Formation of the centers during growth; Impact of increasing nitrogen concentration on the donor-acceptor pair emission.

  • Spectral selection of excitonic transitions in a dense array of CdSe/ZnSe quantum dots. Shubina, T. V.; Rodina, A. V.; Semina, M. A.; Golovatenko, A. A.; Toropov, A. A.; Rakhlin, M. V.; Sedova, I. V.; Sorokin, S. V.; Gronin, S. V.; Sitnikova, A. A.; Kuritsyn, D. I.; Sergeev, S. M.; Krasil'nik, Z. F.; Ivanov, S. V. // Physica Status Solidi (B);Aug2016, Vol. 253 Issue 8, p1485 

    Abstractauthoren We demonstrate that the selection of a limited number of single excitonic lines from a dense array of epitaxial quantum dots (QDs) can be realized spectrally via resonant energy transfer from a huge number of small QDs toward a limited set of large nano-islands through their...

  • Photoluminescence properties of nitrogen-doped ZnSe grown by molecular-beam epitaxy. Ziqiang Zhu; Takebayashi, Kazuhisa; Tanaka, Kiyotake; Ebisutani, Takashi; Kawamata, Junji; Yao, Takafumi // Applied Physics Letters;1/3/1994, Vol. 64 Issue 1, p91 

    Examines the photoluminescence properties of nitrogen-doped zinc selenide epilayers grown by molecular beam epitaxy. Use of a microwave plasma source for nitrogen doping; Determination of the compensation effect caused by nitrogen-associated donors; Production of active nitrogen flux.

  • ZnSe p-n junctions produced by metalorganic molecular-beam epitaxy. Migita, M.; Taike, A.; Yamamoto, H. // Journal of Applied Physics;7/15/1990, Vol. 68 Issue 2, p880 

    Presents a study which fabricated p-n junction in nitrogen-doped p-type zinc selenide/undoped n-type zinc selenide on n-type gallium arsenide. Utilization of metalorganic molecular-beam epitaxy; Formation of a zinc selenide p-n junction; Emission observed from the p-n junction.

  • Free hole gas and its coupling to phonons in ZnSe:Li layers. Olego, D.J.; Petruzzello, J.; Marshall, T.; Cammack, D. // Applied Physics Letters;8/19/1991, Vol. 59 Issue 8, p961 

    Examines the presence and coupling of free hole gas to longitudinal optical phonons in lithium doped zinc selenide semiconductor layers. Growth of layers by molecular beam epitaxy on gallium arsenide substrates; Impact of temperature on phonon spectra; Values for the hole concentration and...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics