Stabilization of InP substrate under annealing in the presence of GaAs

Sacilotti, M.; Masut, R. A.; Roth, A. P.
February 1986
Applied Physics Letters;2/17/1986, Vol. 48 Issue 7, p481
Academic Journal
We report on the annealing of InP and GaAs substrates, placed side by side, in a hydrogen atmosphere. This annealing is done with and without arsine, and also in the presence of elemental arsenic replacing GaAs. This simple technique shows the stabilization of InP by the presence of GaAs in a temperature range between 550 and 750 °C. It gives information about active species present during substrate annealing. The results obtained show that the protecting species of column V elements, dimers or tetramers, behave differently than the ones resulting from the decomposition of the V hydride.


Related Articles

  • Hydrogen-induced contamination of III-V compound surfaces. Proix, F.; Sébenne, C. A.; Cherchour, M.; M’hamedi, O.; Lacharme, J. P. // Journal of Applied Physics;7/15/1988, Vol. 64 Issue 2, p898 

    Presents information on a study which showed that excited hydrogen could be responsible for enhanced reactions which contaminate the surfaces of gallium arsenide and indium phosphide. Characteristic of the contamination; Experimental details; Results and discussion; Conclusions.

  • A photoluminescence study of hydrogenated GaAs grown on an InP substrate by metalorganic chemical vapor deposition. Swaminathan, V.; Chakrabarti, U. K.; Hobson, W. S.; Caruso, R.; Lopata, J.; Pearton, S. J.; Luftman, H. S. // Journal of Applied Physics;7/15/1990, Vol. 68 Issue 2, p902 

    Presents a study which investigated the effects of hydrogenation on the photoluminescence properties of gallium arsenide grown on indium phosphide substrate by metalorganic chemical vapor deposition. Analysis of the emission band originating from the interficial region; Reason for the...

  • Indium oxide Schottky junctions with InP and GaAs. Korobov, V.; Leibovitch, M.; Shapira, Yoram // Journal of Applied Physics;9/1/1993, Vol. 74 Issue 5, p3251 

    Presents a study that investigated indium oxide Schottky junctions with indium phosphide and gallium arsenide. Details of the experiment; Results; Discussion.

  • Novel binary buffer layers for applications in the heteroepitaxy of highly mismatched.... Shou-Zen Chang; Si-Chen Lee; Hung-Pin Shiao; Wei Lin; Yuan-Kuang Tu // Applied Physics Letters;10/25/1993, Vol. 63 Issue 17, p2417 

    Proposes a the use of indium phosphide as a binary buffer layer for large lattice-mismatched heteroepitaxy application. Observation of a three-dimensional island growth at the initial stage; Growth of InP binary buffer layers on semi-insulating gallium arsenide substrates; Application of the...

  • Ambient-induced surface effects on InP and GaAs. Lester, S. D.; Kim, T. S.; Streetman, B. G. // Journal of Applied Physics;12/15/1986, Vol. 60 Issue 12, p4209 

    Presents a study which investigated the effects of gas ambient changes on the photoluminescence intensity and the conductivity of chemically cleaned indium phosphide and gallium arsenide. Experimental details; Results and discussion; Conclusion.

  • Negative magnetoresistance and impurity band conduction in an In...Ga../As/InP heterostructure. Dziuba, Z.; Dybko, K. // Journal of Applied Physics;5/1/1999, Vol. 85 Issue 9, p6619 

    Presents information on a study on electrical conduction in an n-type indium-gallium arsenide/indium phosphide sample grown by molecular beam epitaxy. Electric field analysis; Impurity band conduction; Nature of the impurity band; Negative magnetoresistance.

  • Indium phosphide on gallium arsenide heteroepitaxy with interface layer grown by flow-rate modulation epitaxy. Chen, W. K.; Chen, J. F.; Chen, J. C.; Kim, H. M.; Anthony, L.; Wie, C. R.; Liu, P. L. // Applied Physics Letters;8/21/1989, Vol. 55 Issue 8, p749 

    We have grown and characterized heteroepitaxial films of InP on GaAs. We demonstrate that by using flow-rate modulation epitaxy to grow the interface layer in a two-step process, we can improve the quality of heteroepitaxy films. The full widths at half maximum of the x-ray rocking curve and the...

  • Electronic and optical properties of Ti-doped GaAs and InP; semi-insulating InP. Brandt, C. D.; Hennel, A. M.; Bryskiewicz, T.; Ko, K. Y.; Pawlosicz, L. M.; Gatos, H. C. // Journal of Applied Physics;5/1/1989, Vol. 65 Issue 9, p3459 

    Focuses on a study which examined the effects of titanium (Ti) doping on the electrical and optical properties of gallium arsenide and indium phosphide (InP) employing both melt and solution-grown crystals. Methodology of the study; Analysis of results; Formulation for producing semi-insulating...

  • The effect of oxygen incorporation in semi-insulating (AlxGa1-x)yIn1-yP. McCalmont, J. S.; Casey, H. C.; Wang, T. Y.; Stringfellow, G. B. // Journal of Applied Physics;1/15/1992, Vol. 71 Issue 2, p1046 

    Discusses a study conducted on oxygen-doped, semi-insulating layers of (aluminum-gallium) indium phosphide grown on gallium arsenide using organometallic vapor phase epitaxy. Effect of oxygen doping on semi-insulating layers of the substance; Secondary-ion mass spectrometry measurements;...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics