TITLE

Unpinned (100) GaAs surfaces in air using photochemistry

AUTHOR(S)
Offsey, S. D.; Woodall, J. M.; Warren, A. C.; Kirchner, P. D.; Chappell, T. I.; Pettit, G. D.
PUB. DATE
February 1986
SOURCE
Applied Physics Letters;2/17/1986, Vol. 48 Issue 7, p475
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have unpinned the Fermi level at the surface of both n- and p-type (100) GaAs in air. Light-induced photochemistry between GaAs and water unpins the surface Fermi level by reducing the surface state density. Excitation photoluminescence spectroscopy shows a substantial decrease in both surface band bending and surface recombination velocity in treated samples, consistent with a greatly reduced surface state density ([bar_over_tilde:_approx._equal_to]1011 cm-2). Capacitance-voltage measurements on metal-insulator-semiconductor structures corroborate this reduction in surface state density and show that the band bending may be controlled externally, indicating an unpinned Fermi level at the insulator/GaAs interface. We discuss a possible unpinning mechanism.
ACCESSION #
9819108

 

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