Unpinned (100) GaAs surfaces in air using photochemistry

Offsey, S. D.; Woodall, J. M.; Warren, A. C.; Kirchner, P. D.; Chappell, T. I.; Pettit, G. D.
February 1986
Applied Physics Letters;2/17/1986, Vol. 48 Issue 7, p475
Academic Journal
We have unpinned the Fermi level at the surface of both n- and p-type (100) GaAs in air. Light-induced photochemistry between GaAs and water unpins the surface Fermi level by reducing the surface state density. Excitation photoluminescence spectroscopy shows a substantial decrease in both surface band bending and surface recombination velocity in treated samples, consistent with a greatly reduced surface state density ([bar_over_tilde:_approx._equal_to]1011 cm-2). Capacitance-voltage measurements on metal-insulator-semiconductor structures corroborate this reduction in surface state density and show that the band bending may be controlled externally, indicating an unpinned Fermi level at the insulator/GaAs interface. We discuss a possible unpinning mechanism.


Related Articles

  • Physical and electrical properties of a Si[sub 3]N[sub 4]/Si/GaAs metal–insulator–semiconductor structure. Chen, Zhi; Gong, Dawei // Journal of Applied Physics;10/15/2001, Vol. 90 Issue 8, p4205 

    We simulated capacitance–voltage (C–V) curves of Si[sub 3]N[sub 4]/GaAs, Si[sub 3]N[sub 4]/Si and also Si[sub 3]N[sub 4]/Semi[sup *] (virtual semiconductor) metal–insulator–semiconductor (MIS) capacitors and compared them with experimental C–V curves of a...

  • Schottky-limit barrier heights for CO-coated metal clusters on GaAs(110). Komeda, T.; Stepniak, F. // Applied Physics Letters;6/17/1991, Vol. 58 Issue 24, p2809 

    Discusses the band bending induced by the deposition of metal clusters coated with cobalt (CO) onto gallium arsenide (GaAs) (110). Simulation of a metal-insulator-semiconductor junction by the layer of CO between the metallic clusters; Possibility of changing the cluster-induced Schottky...

  • Si/Ge/S multilayer passivation of GaAs(100) for metal-insulator-semiconductor capacitors. Lu, Z.H.; Landheer, D. // Applied Physics Letters;3/28/1994, Vol. 64 Issue 13, p1702 

    Describes the silicon/germanium/sulfur (S) multilayer passivation of gallium arsenide (GaAs)(100) for metal-insulator-semiconductor capacitors. Absence of Ga and As oxides on the GaAs surface; Preservation of the Ga-S-Ga bridge bond termination on the surface; Analysis of capacitors using high...

  • Si3N4/Si/Ge/GaAs metal-insulator-semiconductor structures grown by in situ chemical vapor deposition. Reed, J.; Gao, G. B.; Bochkarev, A.; Morkoç, H. // Journal of Applied Physics;2/1/1994, Vol. 75 Issue 3, p1826 

    Presents a study which investigated the growth of silicon[sub3]nitrogen[sub4]/silicon/germanium/gallium arsenide metal-insulator-semiconductor (MIS) structures using in situ chemical vapor deposition. Details of the process of growing the samples; Layer structure of the MIS capacitor; Conclusions.

  • Demonstration of an isolated buried channel field-effect transistor fabricated via in situ patterned electron-beam deposition of Si in GaAs. Mills, A. P.; Hong, M.; Mannaerts, J. P.; Pfeiffer, L. N.; West, K. W.; Martin, S.; Ruel, R. R.; Baldwin, K. W.; Rowe, J. E. // Journal of Applied Physics;11/15/1995, Vol. 78 Issue 10, p6039 

    Details a study which demonstrated an isolated buried channel field-effect transistor fabricated via patterned doping of circuit elements and structures of silicon in gallium arsenide. Experimental procedures; Fabrication of the study sample; Characteristics of a buried channel metal-insulator...

  • On the inversion in GaAs metal-insulator-semiconductor heterostructures. Zhi Chen; Noor, S. // Applied Physics Letters;1/13/1997, Vol. 70 Issue 2, p228 

    Examines the inducement of inversion electrons in gallium arsenide (GaAs) metal insulator semiconductor (MIS) heterostructures. Use of [111] strained silicon (Si) as an interlayer between Si[sub 3]N[sub 4] and (111) GaAs; Significance of the inducement of inversion electrons in GaAs;...

  • Insulated-gate multiple quantum well optical modulator on InP. Chen, C. W.; Iyer, R.; Lee, H. Y.; Hafich, M.; Robinson, G. Y.; Lile, D. L. // Applied Physics Letters;11/5/1990, Vol. 57 Issue 19, p1964 

    Insulated-gate metal-insulator-semiconductor (MIS) diodes have been fabricated on multiple quantum well stacks of InP/InGaAs grown by gas-source molecular beam epitaxy. These devices have shown excitonic resonances and optical modulation spectra in pass-through operation similar in shape, but...

  • Two-phase structure of plasma-polymerized thiophene-passivated GaAs Schottky-like metal-insulator-semiconductor diodes. Horváth, Zs. J. // Journal of Applied Physics;12/1/1990, Vol. 68 Issue 11, p5899 

    Presents a study on a two-phase structure of plasma-polymerized thiopene-passivated gallium arsenide Schottky-like-metal-insulator-semiconductor diodes. Determination of the capacitance of metal semiconductor (MS) Schottky diodes; Characteristics obtained for the MS device; Possible reasons for...

  • Degradation characteristics of metal/Al2O3/n-InGaAs capacitors. Palumbo, F.; Eizenberg, M. // Journal of Applied Physics;2014, Vol. 115 Issue 1, p1 

    Implementation of new materials in Metal-Oxide-Semiconductor stacks requires capabilities to predict long-time degradation as well as the impact of process changes on degradation processes. In this work, the degradation under constant voltage stress of metal gate/Al2O3/InGaAs stacks is studied...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics