Schottky barrier formation on electron beam deposited amorphous Si1-xGex[ATOTHER]@B:[/ATOTHER] H alloys and amorphous (Si/Si1-xGex)[ATOTHER]@B:[/ATOTHER] H modulated structures

Christou, A.; Tzanetakis, P.; Hatzopoulos, Z.; Kyriakidis, G.; Tseng, W.; Wilkins, B. R.
February 1986
Applied Physics Letters;2/10/1986, Vol. 48 Issue 6, p408
Academic Journal
Amorphous Si:H and Si1-xGex:H films were prepared by mixing electron beam evaporated silicon with a molecular beam of germanium from a Knudsen cell and with a beam of ionized hydrogen produced by a 0–3 keV ion source. Aluminum Schottky barriers on two types of samples of (1) amorphous Si1-xGex:H with 0.15


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