Room-temperature laser operation of AlGaAs/GaAs double heterostructures fabricated on Si substrates by metalorganic chemical vapor deposition

Sakai, Shiro; Soga, Tetsuo; Takeyasu, Masanari; Umeno, Masayoshi
February 1986
Applied Physics Letters;2/10/1986, Vol. 48 Issue 6, p413
Academic Journal
AlGaAs/GaAs double heterostructure laser diodes have been fabricated on Si substrates using GaP/(GaP/GaAsP) superlattice/(GaAsP/GaAs) superlattice intermediate layers grown by metalorganic chemical vapor deposition. A threshold current density at 16.5 °C and a characteristic temperature T0 of 4.9 kA/cm2 and 179 K respectively have been obtained for the diode on Si substrate.


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