TITLE

Formation of GdSi2 under UHV evaporation and in situ annealing

AUTHOR(S)
Suu, H. V.; Petõ, G.; Mezey, G.; Pászti, F.; Kótai, E.; Fried, M.; Manuaba, A.; Zsoldos, E.; Gyulai, J.
PUB. DATE
February 1986
SOURCE
Applied Physics Letters;2/10/1986, Vol. 48 Issue 6, p437
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GdSi2 was prepared under ultrahigh vacuum conditions. Prior to processing, a clean interface was produced using diluted HF dipping. It is pointed out that the ‘‘critical temperature’’ for formation published earlier is probably an artifact and correlation between the interface native oxide and the critical temperature is established.
ACCESSION #
9819068

 

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