Influence of oxide thickness on the transport properties of silicon metal-oxide-semiconductor systems

Gold, A.
February 1986
Applied Physics Letters;2/10/1986, Vol. 48 Issue 6, p439
Academic Journal
We calculate the effects of a finite oxide thickness on the transport properties of a two-dimensional interacting electron gas in a metal-oxide-semiconductor system at temperature zero. Due to the image potential the electron-impurity interaction and the electron-electron interaction are reduced in comparison to an infinite oxide thickness. For impurity scattering the mobility increases with decreasing oxide thickness d. For surface roughness scattering the opposite effect is found. The thickness effects become relevant for 2kFd≤1 and kF is the Fermi wave number. The influence on the metal insulator phase diagram is also evaluated.


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