Reduction of the spectral linewidth of semiconductor lasers with quantum wire effects—Spectral properties of GaAlAs double heterostructure lasers in high magnetic fields

Arakawa, Y.; Vahala, K.; Yariv, A.; Lau, K.
February 1986
Applied Physics Letters;2/10/1986, Vol. 48 Issue 6, p384
Academic Journal
The spectral linewidth of a GaAlAs double heterostructure laser placed in a high magnetic field is measured at 190 K. It is found that the power-dependent spectral linewidth is reduced by a factor of 0.6 in a magnetic field of 19 T. This reduction is believed to result mainly from the reduction of the linewidth enhancement factor α due to a quasi-one-dimensional electronic system formed by the high magnetic field (i.e., by quantum wire effects).


Related Articles

  • Quantum wire microcavity laser made from GaAs fractional layer superlattices. Chavez-Pirson, A.; Ando, H. // Applied Physics Letters;4/4/1994, Vol. 64 Issue 14, p1759 

    Demonstrates the lasing action in quantum wire microcavity semiconductor laser. Advantages for quantum wire gain medium and microcavity confinement effect; Difficulty of the procedure against defect contamination; Use of semiconductor lasers for efficient laser development.

  • Current injection GaAs/AlGaAs quantum wire lasers fabricated by cleaved edge overgrowth. Wegscheider, Werner; Pfeiffer, Loren // Applied Physics Letters;11/14/1994, Vol. 65 Issue 20, p2510 

    Demonstrates current injection in gallium arsenide/aluminum gallium arsenide quantum wire (QWR) semiconductor diode lasers. Fabrication of semiconductor laser by cleaved edge overgrowth method; Formation of linear p-n junction by beryllium and silicon-modulation QWR doping; Suppression of...

  • Low-damage etched/regrown interface of strain-compensated GaInAsP/InP quantum-wire laser fabricated by CH[sub 4]/H[sub 2] dry etching and regrowth. Yagi, Hideki; Muranushi, Kengo; Nunoya, Nobuhiro; Sano, Takuya; Tamura, Shigeo; Arai, Shigehisa // Applied Physics Letters;8/5/2002, Vol. 81 Issue 6, p966 

    GaInAsP/InP strain-compensated five-layered quantum-wire lasers with the wire width of 23 nm were fabricated by electron-beam lithography, CH[sub 4]/H[sub 2]-reactive ion etching and organometallic vapor-phase-epitaxial regrowth, and the quality of the etched/regrown interface was evaluated from...

  • Kinetic theory of semiconductor cascade laser based on quantum wells and wires. Elesin, V. F.; Krasheninnikov, A. V. // Journal of Experimental & Theoretical Physics;Feb97, Vol. 84 Issue 2, p375 

    The paper presents a numerical solution of a system of nonlinear equations for the electron distribution functions in the upper and lower subbands between which lasing transitions occur and the number of nonequilibrium optical phonons in semiconducting cascade lasers based on quantum wells and...

  • Vertically stacked multiple-quantum-wire semiconductor diode lasers. Simhony, S.; Kapon, E.; Colas, E.; Hwang, D.M.; Stoffel, N.G.; Worland, P. // Applied Physics Letters;10/28/1991, Vol. 59 Issue 18, p2225 

    Examines the structure and lasing characteristics of gallium arsenide/aluminum gallium arsenide multiple quantum wire (QWR) semiconductor lasers. Growth of lasers by organometallic chemical vapor deposition on V-grooved substrate; Comparison with single-QWR structures.

  • Carrier capture and quantum confinement in GaAs/AlGaAs quantum wire lasers grown on V-grooved.... Walther, M.; Kapon, E. // Applied Physics Letters;2/3/1992, Vol. 60 Issue 5, p521 

    Investigates the carrier capture mechanism in semiconductor quantum wire laser grown by organometallic chemical vapor deposition on nonplanar substrate. Use of cathodoluminescence and photoluminescence spectroscopy; Transfer of luminescence intensity from quantum well- to quantum wire-spectral...

  • AlGaInP multiple-quantum-wire lasers grown by gas source molecular beam epitaxy. Stellini, E.M.; Cheng, K.Y.; Pearah, P.J.; Chen, A.C.; Moy, A.M.; Hsieh, K.C. // Applied Physics Letters;2/1/1993, Vol. 62 Issue 5, p458 

    Describes the operation of a graded-index separate-confinement heterostructure visible semiconductor laser with a multiple quantum wire active region. Growth of the laser by molecular beam epitaxy; Formation of the quantum well by strain-induced lateral-layer ordering process; Dependence of...

  • Fabrication of vertical-microcavity quantum wire lasers. Arakawa, T.; Nishioka, M. // Applied Physics Letters;4/25/1994, Vol. 64 Issue 17, p2200 

    Demonstrates the fabrication of indium gallium arsenide quantum wire lasers. Application of metalorganic chemical vapor deposition; Length of the microcavity structure; Measurement of the lasing properties of the sample at 77 Kelvin using optical pumping; Evidence for the cavity effect.

  • Single quantum wire semiconductor lasers. Kapon, E.; Simhony, S.; Bhat, R.; Hwang, D. M. // Applied Physics Letters;12/25/1989, Vol. 55 Issue 26, p2715 

    Single quantum wire GaAs/AlGaAs injection lasers were fabricated using organometallic chemical vapor deposition on V-grooved GaAs substrates. The quantum wire active region has a crescent-shaped cross section ∼100 Å thick and less than 1000 Å wide. Amplified spontaneous emission and...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics