TITLE

Femtojoule optical switching in nonlinear semiconductor laser amplifiers

AUTHOR(S)
Sharfin, W. F.; Dagenais, M.
PUB. DATE
February 1986
SOURCE
Applied Physics Letters;2/3/1986, Vol. 48 Issue 5, p321
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have demonstrated the operation of an optical switch requiring less than 1 f J (<7000 photons) of incident optical energy. The switch operates at room temperature, is compatible with optical communication systems, and is cascadable because it has gain. The switching times (on and off) are determined to be less than 1 ns. This device significantly advances the possibility for realization of high throughput optical signal processing and digital optical computing.
ACCESSION #
9819045

 

Related Articles

  • High-speed and high-gain optical amplifying photodetection in a semiconductor laser amplifier. Nakajima, Hisao // Applied Physics Letters;3/13/1989, Vol. 54 Issue 11, p984 

    A high-speed and high-gain photodetection was experimentally demonstrated in a distributed feedback semiconductor laser amplifier by detecting its forward voltage changes induced by the injection of weak intensity modulated light. Physical phenomenon involved in the photodetection stems from the...

  • Optical frequency-selective amplification in a distributed feedback type semiconductor laser amplifier. Kawaguchi, Hitoshi; Magari, Katsuaki; Oe, Kunishige; Noguchi, Yoshio; Nakano, Yoshinori; Motosugi, George // Applied Physics Letters;1/12/1987, Vol. 50 Issue 2, p66 

    Optical frequency-selective amplification of an injected optical signal in a distributed feedback type semiconductor laser amplifier is studied. Based on this mechanism an optical demultiplexer with optical gain for optical frequency-division multiplexing is developed. A 9 GHz spectrum...

  • 11.6 W peak power, diffraction-limited diode-to-diode optical amplifier. Mehuys, David; Welch, David F.; Goldberg, Lew; Weller, Joseph // Applied Physics Letters;2/8/1993, Vol. 62 Issue 6, p544 

    Demonstrates the emission of single-pass semiconductor amplifier injected with a 100 megaWatt single-mode diode laser master oscillator. Analysis of amplifier slope efficiency; Determination of saturated optical amplifier gain; Obtainment of high-gain diffraction-limited output powers.

  • Experimental observation of time jitter in semiconductor laser turn-on. Spano, P.; D’Ottavi, A.; Mecozzi, A.; Daino, B. // Applied Physics Letters;6/27/1988, Vol. 52 Issue 26, p2203 

    We report an experimental study which shows how time jitter in semiconductor lasers, which arises when such sources are switched from below to above threshold, is related to the actual operating conditions. The effect is observed both in distributed feedback and in Fabry–Perot lasers,...

  • Gigahertz switching behavior of polarization-bistable InGaAsP/InP lasers under high-frequency.... Klehr, A.; Muller, R. // Applied Physics Letters;2/14/1994, Vol. 64 Issue 7, p830 

    Investigates the gigahertz switching dynamics of polarization-bistable ridge-waveguide-indium gallium arsenic phosphide/indium phosphide laser. Modulation of injection current; Difference among the types of emission behaviors; Occurrence of stochastic modal switching at high modulation...

  • Efficient Er3+-doped optical fiber amplifier pumped by a 1.48 μm InGaAsP laser diode. Nakazawa, Masataka; Kimura, Yasuo; Suzuki, Kazunori // Applied Physics Letters;1/23/1989, Vol. 54 Issue 4, p295 

    Optical gain characteristics of an Er3+ -doped silica fiber have been studied by end pumping with a 1.48 μm InGaAsP high-power laser diode. A gain as high as 12.5 dB was obtained for an absorbed pump power of 16 mW with a 3-m-long fiber. By constructing an Er3+ fiber ring cavity with a 3 dB...

  • A 970 nm strained-layer InGaAs/GaAlAs quantum well laser for pumping an erbium-doped optical fiber amplifier. Wu, Ming C.; Olsson, N. A.; Sivco, D.; Cho, A. Y. // Applied Physics Letters;1/15/1990, Vol. 56 Issue 3, p221 

    We report the performance of a 970 nm strained-layer InGaAs/GaAlAs quantum well laser and its application for pumping Er-doped optical fiber amplifiers. The laser was grown by molecular beam epitaxy and has three In0.2Ga0.8As/GaAs quantum wells. For a 5-μm-wide and 400-μm-long...

  • Analytical solution of wave mixing between short optical pulses in a semiconductor optical.... Shtaif, M.; Eisenstein, G. // Applied Physics Letters;3/20/1995, Vol. 66 Issue 12, p1458 

    Presents an analytical solution of wave mixing in a semiconductor optical amplifier emphasizing operation with short optical pulses. Propagation of an electromagnetic wave along a traveling wave semiconductor optical amplifier; Description of calculated conversion efficiencies for pulses;...

  • Limitations on ultrafast optical switching in a semiconductor laser amplifier operating at... Kao, Y.-H.; Xia, T. J. // Journal of Applied Physics;11/1/1999, Vol. 86 Issue 9, p4740 

    Presents information on a study which examined the ultrafast optical switching in a semiconductor laser amplifier (SLA) at transparency current under a strong pump condition. Cross-polarized pump-probe experiments; Experimental results for ultrafast switching in SLA; Coupled propagation equations.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics