Femtojoule optical switching in nonlinear semiconductor laser amplifiers

Sharfin, W. F.; Dagenais, M.
February 1986
Applied Physics Letters;2/3/1986, Vol. 48 Issue 5, p321
Academic Journal
We have demonstrated the operation of an optical switch requiring less than 1 f J (<7000 photons) of incident optical energy. The switch operates at room temperature, is compatible with optical communication systems, and is cascadable because it has gain. The switching times (on and off) are determined to be less than 1 ns. This device significantly advances the possibility for realization of high throughput optical signal processing and digital optical computing.


Related Articles

  • Multiwavelength-switchable SOA-fibre ring laser using sampled Hi-Bi fibre grafting. Bong-Ahn Yu; Jaejoong Kwon; Seunghwan Chung; Seung-Woo Seo; Byoungho Lee // Electronics Letters;4/17/2003, Vol. 39 Issue 8, p649 

    A novel multiwavelength-switchable laser based on a semiconductor optical amplifier (SOA) within a fibre ring cavity with a sampled highbirefringence fibre grating is proposed. Four channels with 0.8 nm spacing have been generated at room temperature and switched to other channels with 0.4 nm...

  • 11.6 W peak power, diffraction-limited diode-to-diode optical amplifier. Mehuys, David; Welch, David F.; Goldberg, Lew; Weller, Joseph // Applied Physics Letters;2/8/1993, Vol. 62 Issue 6, p544 

    Demonstrates the emission of single-pass semiconductor amplifier injected with a 100 megaWatt single-mode diode laser master oscillator. Analysis of amplifier slope efficiency; Determination of saturated optical amplifier gain; Obtainment of high-gain diffraction-limited output powers.

  • Optical frequency-selective amplification in a distributed feedback type semiconductor laser amplifier. Kawaguchi, Hitoshi; Magari, Katsuaki; Oe, Kunishige; Noguchi, Yoshio; Nakano, Yoshinori; Motosugi, George // Applied Physics Letters;1/12/1987, Vol. 50 Issue 2, p66 

    Optical frequency-selective amplification of an injected optical signal in a distributed feedback type semiconductor laser amplifier is studied. Based on this mechanism an optical demultiplexer with optical gain for optical frequency-division multiplexing is developed. A 9 GHz spectrum...

  • High-speed and high-gain optical amplifying photodetection in a semiconductor laser amplifier. Nakajima, Hisao // Applied Physics Letters;3/13/1989, Vol. 54 Issue 11, p984 

    A high-speed and high-gain photodetection was experimentally demonstrated in a distributed feedback semiconductor laser amplifier by detecting its forward voltage changes induced by the injection of weak intensity modulated light. Physical phenomenon involved in the photodetection stems from the...

  • Gigahertz switching behavior of polarization-bistable InGaAsP/InP lasers under high-frequency.... Klehr, A.; Muller, R. // Applied Physics Letters;2/14/1994, Vol. 64 Issue 7, p830 

    Investigates the gigahertz switching dynamics of polarization-bistable ridge-waveguide-indium gallium arsenic phosphide/indium phosphide laser. Modulation of injection current; Difference among the types of emission behaviors; Occurrence of stochastic modal switching at high modulation...

  • Experimental observation of time jitter in semiconductor laser turn-on. Spano, P.; D’Ottavi, A.; Mecozzi, A.; Daino, B. // Applied Physics Letters;6/27/1988, Vol. 52 Issue 26, p2203 

    We report an experimental study which shows how time jitter in semiconductor lasers, which arises when such sources are switched from below to above threshold, is related to the actual operating conditions. The effect is observed both in distributed feedback and in Fabry–Perot lasers,...

  • Efficient Er3+-doped optical fiber amplifier pumped by a 1.48 μm InGaAsP laser diode. Nakazawa, Masataka; Kimura, Yasuo; Suzuki, Kazunori // Applied Physics Letters;1/23/1989, Vol. 54 Issue 4, p295 

    Optical gain characteristics of an Er3+ -doped silica fiber have been studied by end pumping with a 1.48 μm InGaAsP high-power laser diode. A gain as high as 12.5 dB was obtained for an absorbed pump power of 16 mW with a 3-m-long fiber. By constructing an Er3+ fiber ring cavity with a 3 dB...

  • Effect of SESAM on continuous-wave multi-wavelength fiber ring-cavity laser with semiconductor optical amplifier. Luo, Min; Cao, Wei; Chen, Haiyan // International Journal of Modern Physics B: Condensed Matter Phys;Apr2019, Vol. 33 Issue 9, pN.PAG 

    The effect of semiconductor saturable absorber mirror (SESAM) on continuous-wave multi-wavelength fiber ring-cavity laser with semiconductor optical amplifier (SOA) is experimentally demonstrated. The evolutionary process of multi-wavelength oscillation and the decrease of oscillating mode...

  • Antireflection coated semiconductor laser amplifier for Bose-Einstein condensation experiments. Pandey, Saurabh; Mas, Hector; Drougakis, Giannis; Mavrakis, Kostas G.; Mylonakis, Mikis; Vasilakis, Georgios; Bolpasi, Vasiliki; von Klitzing, Wolf // AIP Advances;Sep2018, Vol. 8 Issue 9, pN.PAG 

    We present a slave laser highly suitable for the preparation and detection of 87Rb Bose-Einstein condensates (BEC). A highly anti-reflection coated laser diode serves as an optical amplifier, which requires neither active temperature stabilization nor dedicated equipment monitoring the spectral...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics