Dynamic characteristics of dislocations in indium-doped gallium arsenide crystal

Yonenaga, Ichiro; Sumino, Koji; Yamada, Koji
February 1986
Applied Physics Letters;2/3/1986, Vol. 48 Issue 5, p326
Academic Journal
Characteristics in the motion of dislocations generated from scratches in GaAs doped with In at a concentration of 2×1020 atoms/cm3 are investigated and are compared with those in undoped GaAs. α dislocations in In-doped GaAs are found to be immovable under stress lower than 10 MPa in the temperature range 350–750 °C. Such immovability under low stress is not found for β dislocations in In-doped GaAs and for both α and β dislocations in undoped GaAs.


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