Formation of a new deep emission in Si+, S+, Se+, and Te+ ion-implanted GaAs

Makita, Yunosuke; Takeuchi, Yoshinori; Nomura, Toshio; Tanaka, Hideki; Kanayama, Toshihiko; Tanoue, Hisao; Irie, Katsuhiro; Ohnishi, Nobukazu
February 1986
Applied Physics Letters;2/3/1986, Vol. 48 Issue 5, p329
Academic Journal
Photoluminescence studies of Si+, S+, Se+, and Te+ ion-implanted GaAs made by molecular beam epitaxy were carried out at 2 K. A new emission denoted by [D] was commonly obtained at 1.408 eV. It was also found that the controversial near band-edge emissions, ‘g’ and [g-g], which were originally produced by the ion implantation of acceptor impurities, were not formed by donor ion implantation.


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