TITLE

Monolithic integration of GaAs light-emitting diodes and Si metal-oxide-semiconductor field-effect transistors

AUTHOR(S)
Ghosh, Ruby N.; Griffing, Bruce; Ballantyne, Joseph M.
PUB. DATE
February 1986
SOURCE
Applied Physics Letters;2/3/1986, Vol. 48 Issue 5, p370
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A monolithic optoelectronic circuit, consisting of a GaAs light-emitting diode (LED) driven by a Si metal-oxide-semiconductor (MOS) transistor, has been fabricated. Light output as a function of applied gate voltage was measured. The LED’s were fabricated in GaAs layers on Ge-coated Si substrates containing MOS transistors. Normal transistor performance was observed after the GaAs LED fabrication, indicating that GaAs and Si processing technologies appear to be compatible.
ACCESSION #
9819020

 

Related Articles

  • Solid-state sources tackle night vision. Jones-Bey, Hassaun A. // Laser Focus World;May2005, Vol. 41 Issue 5, p44 

    This article reports that developers of solid-state lighting systems are also expanding the capabilities of night vision for applications such as automotive safety, infrastructure security, and search and rescue, by extending visible light-emitting diode (LED) and laser technology into the...

  • Picosecond hot electron light emission from submicron complementary metal-oxide-semiconductor.... Tsang, J.C.; Kash, J.A. // Applied Physics Letters;2/17/1997, Vol. 70 Issue 7, p889 

    Examines the picosecond hot electron light emission from submicron complementary metal-oxide-semiconductor (CMOS) logic gates. Ways to detect light emission; Characteristics of the optical emission; Uses of the emission.

  • Heterogeneously integrated organic light-emitting diodes with complementary metal-oxide-silicon circuitry. Mathine, D. L.; Mathine, D.L.; Woo, H. S.; Woo, H.S.; He, W.; Kim, T. W.; Kim, T.W.; Kippelen, B.; Peyghambarian, N. // Applied Physics Letters;6/26/2000, Vol. 76 Issue 26 

    Top-emitting arrays of organic light-emitting diodes (OLEDs) have been fabricated and demonstrated on complementary metal-oxide-silicon (CMOS) circuitry. The 8x8 array of OLEDs is composed of 90 μm micropixels with a 55 μm separation. The OLEDs are based on an emitting layer of...

  • Are LEDs in your home yet? Anderson, Stephen G. // Laser Focus World;Nov2010, Vol. 46 Issue 11, p7 

    An introduction to the journal is presented in which the editor discusses an article on the state of light-emitting diode (LED) technology, the use of two higher-energy and independent systems with synchronized pulses within 200 fs, and the complementary metal oxide semiconductors (CMOS)...

  • Electroluminescence at Si band gap energy based on metal-oxide-silicon structures. Lin, Ching-Fuh; Liu, C. W. // Journal of Applied Physics;6/15/2000, Vol. 87 Issue 12, p8793 

    Presents information on a study which observed room-temperature electroluminescence corresponding to silicon (Si) band gap energy from metal-oxide-semiconductor structures on both p-type and n-type Si. Efforts devoted to converting silicon to a light-emitting material; Method used in observing...

  • Blue-green light-emitting diodes promise full-color displays. Cook Jr., James W.; Schetzina, Jan F. // Laser Focus World;Mar95, Vol. 31 Issue 3, p101 

    Reports on the possible full-color display applications of high-brightness blue- and green-light-emitting diodes. Light emission capabilities of III-V nitride semiconductors; Development of II-VI semiconductors based on zinc selenide for blue and green applications.

  • OPTOELECTRONICS & DISPLAYS.  // ECN: Electronic Component News;Feb2010, Vol. 54 Issue 2, p28 

    The article evaluates several optoelectronic devices including the DEC-A19- 5X1W DécorLED Series from LEDtronics Inc., the TLxK light-emitting diode (LED) series from Marktech Optoelectronics and the ISD-1.6-Si-1 and ISD-1.6- Si-FC-1 radiant power detector from Gigahertz-Optik GmbH.

  • UV LEDs live long, so you prosper. Schweber, Bill // EDN;12/12/2002, Vol. 47 Issue 27, p24 

    Focuses on the benefits of ultraviolet light emitting diode (UVLED) from Bivar Inc.'s optoelectronics division. Features of the product; Radiant flux produced by the Uv LED; Price of the product.

  • InAs/Ga[sub 0.47]In[sub 0.53]As quantum wells: A new III-V materials system for light emission.... Tournie, Eric; Ploog, Klaus H. // Applied Physics Letters;12/7/1992, Vol. 61 Issue 23, p2808 

    Proposes the use of strained indium arsenide/gallium indium arsenide quantum wells light emission in the mid-infrared wavelength range. Acquisition of light emission from all samples; Potential of the indium arsenide/gallium indium arsenide quantum wells materials system for fabrication;...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics