Monolithic integration of GaAs light-emitting diodes and Si metal-oxide-semiconductor field-effect transistors

Ghosh, Ruby N.; Griffing, Bruce; Ballantyne, Joseph M.
February 1986
Applied Physics Letters;2/3/1986, Vol. 48 Issue 5, p370
Academic Journal
A monolithic optoelectronic circuit, consisting of a GaAs light-emitting diode (LED) driven by a Si metal-oxide-semiconductor (MOS) transistor, has been fabricated. Light output as a function of applied gate voltage was measured. The LED’s were fabricated in GaAs layers on Ge-coated Si substrates containing MOS transistors. Normal transistor performance was observed after the GaAs LED fabrication, indicating that GaAs and Si processing technologies appear to be compatible.


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