Optically pumped laser oscillation at 3.9 μm from Al0.5Ga0.5Sb/InAs0.91Sb0.09/Al0.5Ga0.5Sb double heterostructures grown by molecular beam epitaxy on GaSb

van der Ziel, J. P.; Chiu, T. H.; Tsang, W. T.
February 1986
Applied Physics Letters;2/3/1986, Vol. 48 Issue 5, p315
Academic Journal
Double heterostructures consisting of InAs0.91 Sb0.09 active layers with Al0.5 Ga0.5Sb cladding layers were grown by molecular beam epitaxy on GaSb substrates. Optically pumped laser emission at 3.9 μm was observed from 80 to 135 K with an exponentially dependent threshold with T0=17 K. At 80 K the threshold corresponds to an effective current of 4 kA/cm2. This value represents a significant reduction when compared with previous results. For a 1-μm-thick active layer the full angular width of the far field at the half intensity point normal to the junction is 40° and is in reasonable agreement with the width calculated from the guide and cladding refractive indices.


Related Articles

  • Double-heterostructure Pb[sub 1-x-y]Cd[sub x]Sr[sub y]S/PbS/Pb[sub 1-x-y]Cd[sub x]Sr[sub y]S... Koguchi, N.; Takahashi, S. // Applied Physics Letters;2/25/1991, Vol. 58 Issue 8, p799 

    Discusses the fabrication of Pb[sub 1-x-y]Cd[sub x]Sr[sub y]S/PbS/Pb[sub 1-x-y]Cd[sub x]Sr[sub y]S double heterostructure lasers emitting at a midinfrared wavelength region. Use of molecular beam epitaxy; Effects of the lattice mismatches between active and confinement layers and also between...

  • Infrared double-heterostructure diode lasers made by molecular beam epitaxy of Pb1-xEuxSe. Tacke, M.; Spanger, Beate; Lambrecht, A.; Norton, P. R.; Böttner, H. // Applied Physics Letters;12/5/1988, Vol. 53 Issue 23, p2260 

    Infrared (IR) diode lasers have been made by growing heterostructures or graded structures of Pb1-xEuxSe. This IV-VI ternary has a small lattice variation within the IR band-gap range. Double-heterostructure lasers with PbSe active layers were operated up to T=174 K cw and 220 K pulsed mode;...

  • Superior output linearity of optimized double heterostructure vertical-cavity top-emitting lasers. Tu, L.W.; Schubert, E.F. // Applied Physics Letters;5/1/1995, Vol. 66 Issue 18, p2315 

    Presents the characteristics of the optimized double heterostructure vertical-cavity top-emitting lasers. Utilization of molecular beam epitaxy in growing the lasers; Optimization of the doping profile and the laser structure; Superiority of the lasers' output linearity compared to quantum well...

  • Mid-Infrared (λ = 2.775μm) Injection Laser Based on AlGaAsSb/InAs/CdMgSe Hybrid Double Heterostructure Grown by Molecular-Beam Epitaxy. Ivanov, S. V.; Moiseev, K. D.; Kaıgorodov, V. A.; Solov’ev, V. A.; Sorokin, S. V.; Meltser, B. Ya.; Grebenshchikova, E. A.; Sedova, I. V.; Terent’ev, Ya. V.; Semenov, A. N.; Astakhova, A. P.; Mikhaılova, M. P.; Toropov, A. A.; Yakovlev, Yu. P.; Kop’ev, P. S.; Alferov, Zh. I. // Semiconductors;Jun2003, Vol. 37 Issue 6, p736 

    The lasing of an injection-pumped p-AlGaAsSb/n[SUP0]-InAs/n-CdMgSe double hybrid heterostructure in the mid-IR range is demonstrated for the first time. The lasing wavelength λ is 2.775 μm, and the threshold current density J[SUBth] = 3-4 kA/cm[SUP2] at T = 77 K. The structure grown by...

  • Buried heterostructure laser fabricated using reactive ion etching and gas source molecular.... Lievin, J.-L.; Le Gouezigou, L. // Applied Physics Letters;3/9/1992, Vol. 60 Issue 10, p1211 

    Demonstrates a buried heterostructure laser using reactive ion etching for stripe definition and gas source molecular beam epitaxy. Features of the structure design; Exhibition of continuous wave operation; Suitability of the process for integration purposes and high yield wafer processing.

  • Low-threshold 1.3-mum wavelength, InGaAsP strained-layer multiple quantum well lasers grown by.... Guang-Jye Shiau; Chih-Ping Chao // Applied Physics Letters;8/15/1994, Vol. 65 Issue 7, p892 

    Describes the growth of low-threshold 1.3-micrometer wavelength strained-layer indium gallium arsenic phosphide heterostructure quantum well lasers. Application of gas source molecular beam epitaxy; Value of the lowest threshold current density; Use of silicon-doped (100) indium phosphide...

  • Near-room-temperature operation of Pb1-xSrxSe infrared diode lasers using molecular beam epitaxy growth techniques. Spanger, Beate; Schiessl, U.; Lambrecht, A.; Böttner, H.; Tacke, M. // Applied Physics Letters;12/26/1988, Vol. 53 Issue 26, p2582 

    Double-Heterostructure lasers have been fabricated with an active layer of PbSe sandwiched between cladding layers of Pb1-x Srx Se. They were operated up to T=290 K (17 °C) in pulsed and T=169 K in cw mode. This is the highest operational temperature in pulsed mode reported for lead salt...

  • Low-threshold interrupted-growth step-index separate-confinement heterostructure GaAs/(Al,Ga)As lasers grown by molecular-beam epitaxy. Pion, Martin; Specht, Alisa; Appelman, Howard; Ebersohl, Richard; Begley, David; Waters, Robert; Guido, Thomas; Stazak, Susan // Journal of Applied Physics;1/15/1988, Vol. 63 Issue 2, p588 

    Investigates the low-threshold operation of interrupted-growth gallium arsenide step-index separate confinement heterostructure lasers grown on misoriented substrates by molecular-beam epitaxy. Molecular-beam-epitaxy system used in the study; Devices used for material threshold current density...

  • Growth of 1.3 mum InAsP/InGaAsP laser structures by gas source molecular beam epitaxy. Thiagarajan, P.; Bernussi, A.A. // Applied Physics Letters;12/18/1995, Vol. 67 Issue 25, p3676 

    Describes the growth of 1.3 mum indium arsenic phosphide/indium gallium arsenic phosphide laser structures by gas source molecular beam epitaxy. Optimization of the growth condition; Measurement of the photoluminescence intensity of strained multiple quantum well laser; Determination of...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics