Nitrogen related doping with implant Si3N4 formation in Si

Davies, D. Eirug; Adamski, Joseph A.; Kennedy, E. F.
February 1986
Applied Physics Letters;2/3/1986, Vol. 48 Issue 5, p347
Academic Journal
A heavily conducting region has been observed on implanting nitrogen into silicon for forming a buried dielectric layer. The conduction predominantly occurs in the surface silicon layer adjacent to the higher nitrogen content isolating region. The doping, >=1018 cm-3 and exceeding previously observed nitrogen related doping, is relatively stable at customary 1150–1200 °C processing temperatures and its elimination requires annealing >=1300 °C.


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