Variable barrier height semiconductor/HxWO3 diodes

Rauh, R. D.; Rose, T. L.; Benoit, S. N.
February 1986
Applied Physics Letters;2/3/1986, Vol. 48 Issue 5, p362
Academic Journal
Diodes of configuration HxWO3|p- or n-Si and HxWO3|n-CdS have been fabricated, where the effective work function of the HxWO3 can be varied reversibly by electrochemical hydrogen insertion/extraction. The diodes have a continuously variable barrier height, as indicated by their saturation photovoltage. These systems serve as prototypes for a class of chemically sensitive electronic devices.


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