Measurement of the minority-carrier lifetime and injection efficiency in AlGaAs/GaAs heterojunction bipolar transistors

Chand, Naresh; Fischer, Russ; Henderson, Tim; Morkoç, Hadis; Neugroschel, Arnost
February 1986
Applied Physics Letters;2/3/1986, Vol. 48 Issue 5, p367
Academic Journal
To obtain an insight of the factors limiting the current gain, minority-carrier lifetime (τn), base transport factor (αT), and emitter injection efficiency (γ) have been studied in npn AlGaAs/GaAs heterojunction bipolar transistors using a base width modulation technique. It is found that in addition to γ, αT is also a function of current injection level. At low injection αT increases at a fast rate with increasing injection. It is felt that, in addition to the surface recombination current at the periphery of the emitter-base space-charge region which affects γ, surface recombination of the minority carriers in the base of a mesa device is also important as it greatly reduces αT and hence the current gain.


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