TITLE

Determination of the microscopic quality of InGaAs-InAlAs interfaces by photoluminescence—Role of interrupted molecular beam epitaxial growth

AUTHOR(S)
Juang, F-Y.; Bhattacharya, P. K.; Singh, J.
PUB. DATE
January 1986
SOURCE
Applied Physics Letters;1/27/1986, Vol. 48 Issue 4, p290
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Photoluminescence (PL) studies have been carried out on 120 Ã… InGaAs/InAlAs single quantum well structures grown by molecular beam epitaxy. Three types of samples were grown with the growth being interrupted before interface formation. The interruption times were 0, 2, and 3 min. The corresponding linewidth of the main excitonic transition associated with the quantum well was found to be 20, 16, and 10 meV, respectively, while the PL intensity changed by the ratio 1:0.4:0.1. We believe this behavior is due to a steady improvement in the interface quality due to interruption accompanied by impurity accumulation during the interruption. Analysis of the 10 meV linewidth, which is among the smallest ever reported, suggests that the InAlAs/InGaAs interface can be described by two-dimensional InAlAs and InGaAs islands which have a height of two monolayers and a lateral extent of about 100 Ã….
ACCESSION #
9818983

 

Related Articles

  • Measurement of AlGaAs/AlGaAs interface recombination velocities using time-resolved photoluminescence. Timmons, M. L.; Colpitts, T. S.; Venkatasubramanian, R.; Keyes, B. M.; Dunlavy, D. J.; Ahrenkiel, R. K. // Applied Physics Letters;5/7/1990, Vol. 56 Issue 19, p1850 

    Time-resolved photoluminescence has been used to examine AlxGa1-xAs/AlyGa1-yAs interfaces, focusing on the recombination velocity. For an Al0.08Ga0.92As/Al0.88Ga0.12As interface, important for solar cells, recombination velocities are about 104 cm/s with the growth conditions used in this study....

  • Optical properties of (113) GaAs/AlAs superlattices grown by molecular beam epitaxy and atomic layer molecular beam epitaxy. Bacquet, G.; Hassen, F.; Lauret, N.; Armelles, G.; Dominguez, P. S.; Gonzalez, L. // Journal of Applied Physics;1/1/1995, Vol. 77 Issue 1, p339 

    Presents a study that investigated the optical properties of gallium arsenide/aluminum arsenide superlattices grown by molecular beam epitaxy (MBE) and atomic layer MBE on gallium arsenide substrates. Photoluminescence excitation spectra of atomic layer MBE superlattices; Comparison between the...

  • Ultrafast carrier dynamics at a metal-semiconductor interface. Christianen, P. C. M.; van Hall, P. J.; Bluyssen, H. J. A.; Leys, M. R.; Drost, L.; Wolter, J. H. // Journal of Applied Physics;12/15/1996, Vol. 80 Issue 12, p6831 

    Presents a study which discussed the ultrafast carrier dynamics of a metal semiconductor interface. Relation of photoluminescence decay time to carrier from the gallium arsenide depletion region; Mathematical methods for the measurement of transient transport; Discussion on the layer...

  • Effect of interface structure on photoluminescence of InGaAs/GaAs pseudomorphic single quantum wells. Devine, R. L. S.; Moore, W. T. // Journal of Applied Physics;11/1/1987, Vol. 62 Issue 9, p3999 

    Reports on the effect of interface structure on photoluminescence of InGaAs/gallium arsenide pseudomorphic single quantum wells. Significance of photoluminescence in the investigation of the interface quality of quantum well structures; Problem of asymmetric interfaces; Effect of excitation...

  • Polarization charges at spontaneously ordered (In, Ga)P/GaAs interfaces. Krispin, P.; Knauer, A.; Gramlich, S. // Applied Physics Letters;4/8/2002, Vol. 80 Issue 14, p2493 

    The depth-resolved electrical characteristics of n- and p-type GaAs/(In, Ga)P/GaAs heterojunctions are examined by capacitance–voltage measurements. Different epitaxial growth conditions are chosen to produce heterointerfaces with (In, Ga)P layers of various degrees of order. Irrespective...

  • Improvement of the interface quality during thermal oxidation of Al[sub 0.98]Ga[sub 0.02]As layers due to the presence of low-temperature-grown GaAs. Ferrer, J. C.; Ferrer, J.C.; Liliental-Weber, Z.; Reese, H.; Chiu, Y. J.; Chiu, Y.J.; Hu, E. // Applied Physics Letters;7/10/2000, Vol. 77 Issue 2 

    The role of a low-temperature-grown GaAs (LT GaAs) layer on the lateral oxidation of an Al[sub 0.98]Ga[sub 0.02]As/GaAs layer structure has been studied by transmission electron microscopy. Results show that structures incorporating LT GaAs develop better quality oxide/GaAs interfaces compared...

  • Interpretation of anomalous temperature dependence of anti-Stokes photoluminescence at GaInP[sub 2]/GaAs interface. Xu, S.J.; Li, Q.; Dong, J.-R.; Chua, S.J. // Applied Physics Letters;3/29/2004, Vol. 84 Issue 13, p2280 

    In this letter, we report on temperature-dependent anti-Stokes photoluminescence (ASPL) at an interface between partially ordered GaInP[sub 2] epilayer and GaAs substrate. It is found that the intensity of the ASPL depends strongly on temperature accompanying with a clear blueshift in energy. A...

  • Magnetic field-dependent photoluminescence linewidths as a probe of disorder length scales in quantum wells. Bansal, Bhavtosh; Hayne, M.; Arora, B. M.; Moshchalkov, V. V. // Applied Physics Letters;12/17/2007, Vol. 91 Issue 25, p251108 

    Photoluminescence from highly disordered GaAs quantum wells is studied in magnetic fields up to 50 T. The monotonic decrease of the photoluminescence linewidth with increasing quantum well thickness indicates that interface roughness is the primary source of line broadening. The magnetic...

  • X-ray photoelectron spectroscopy study of the interfacial reactivity of Si with the oxidized GaAs (100) surface. Cuberes, M. T.; Sacedón, J. L. // Applied Physics Letters;12/24/1990, Vol. 57 Issue 26, p2794 

    The chemistry of the interfacial reactions of Si with GaAs oxides has been investigated by x-ray photoelectron spectroscopy (XPS). We present evidence of a room-temperature chemical reaction between Si and the oxides of GaAs that leads to complete reduction of the As and Ga oxides. Si deposition...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics