Observation of giant induced voltages in high mobility GaAs-AlxGa1-xAs heterostructures in the quantized Hall regime

Syphers, D. A.; Martin, K. P.; Higgins, R. J.
January 1986
Applied Physics Letters;1/27/1986, Vol. 48 Issue 4, p293
Academic Journal
We report studies on the use of the very low resistivity ( ρxx∼0) of GaAs-AlxGa1-xAs heterostructures in the quantized Hall regime (QHR). It is shown that low-frequency inductive coupling to this system can result in radial charge transport, and is perhaps the first use of the QHR lossless properties free of losses from the Hall resistance ρxy. We show that this effect provides an easy way to measure the value of ρxx throughout a quantized Hall plateau, and the effect of capacitance between contacts is discussed.


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