TITLE

Organometallic vapor phase epitaxial growth of GaInP/GaAs (AlGaAs) heterostructures

AUTHOR(S)
Shealy, J. R.; Schaus, C. F.; Eastman, L. F.
PUB. DATE
January 1986
SOURCE
Applied Physics Letters;1/20/1986, Vol. 48 Issue 3, p242
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The growth of GaInP/AlGaAs heterostructures by organometallic vapor phase epitaxy is reported. It was observed that different GaInP alloy compositions are required to lattice match films to AlGaAs and GaAs buffer layers for optimum results. Quantum well heterostructures with GaInP regions as narrow as 30 Ã… have been produced with abrupt transitions of the group III and group V species across each interface. The results suggest that this material system is suitable for the fabrication of high efficiency visible light sources.
ACCESSION #
9818939

 

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