Influence of Ga-As-Te interfacial phases on the orientation of epitaxial CdTe on GaAs

Feldman, R. D.; Austin, R. F.; Kisker, D. W.; Jeffers, K. S.; Bridenbaugh, P. M.
January 1986
Applied Physics Letters;1/20/1986, Vol. 48 Issue 3, p248
Academic Journal
When CdTe is grown by molecular beam or organometallic vapor phase epitaxy on (100) GaAs, the layer can grow with either a (100) or (111) orientation. Reflection high-energy electron diffraction and Auger studies are presented here which show that adsorption of different submonolayer amounts of Te on a GaAs surface can change the surface symmetry and the resulting CdTe orientation. A precursor surface to (111) growth results from the formation of a relatively Te-poor Ga-As-Te surface phase. A relatively Te-rich structure yields a surface with (100) symmetry and lead to (100) growth.


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