TITLE

Photopumped laser operation of GaAs doping superlattices

AUTHOR(S)
Vojak, B. A.; Zajac, G. W.; Chambers, F. A.; Meese, J. M.; Chumbley, P. E.; Kaliski, R. W.; Holonyak, N.; Nam, D. W.
PUB. DATE
January 1986
SOURCE
Applied Physics Letters;1/20/1986, Vol. 48 Issue 3, p251
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The photopumped laser operation of GaAs doping superlattices grown by molecular beam epitaxy is reported. As expected, laser emission is at lower energy than that of bulk undoped GaAs. This emission is attributed to donor to acceptor transitions that occur after the doping superlattice is excited to a flatband condition. Laser operation via electron to hole tunneling and recombination at lower energies, which requires extremely low thresholds, is not observed.
ACCESSION #
9818929

 

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