TITLE

Room-temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition

AUTHOR(S)
Ishikawa, Masayuki; Ohba, Yasuo; Sugawara, Hideto; Yamamoto, Motoyuki; Nakanisi, Takatosi
PUB. DATE
January 1986
SOURCE
Applied Physics Letters;1/20/1986, Vol. 48 Issue 3, p207
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Room-temperature cw operation for InGaP/InGaAlP double heterostructure (DH) laser diodes on GaAs substrates was achieved for the first time. The DH wafers were grown by low-pressure metalorganic chemical vapor deposition using methyl metalorganics. A lasing wavelength of 679 nm and a threshold current of 109 mA at 24 °C were obtained for an inner stripe structure laser diode with a 250-μm-long and 7-μm stripe geometry. The laser operated at up to 51 °C. The characteristic temperature T0 was 87 K at around room temperature. The lowest threshold current density, 5.0 kA/cm2, was obtained with a 20-μm stripe width laser diode under room-temperature pulsed operation.
ACCESSION #
9818917

 

Related Articles

  • Temperature dependence of spontaneous emission from AlGaAs-GaAs laser diodes. Zabrowski, D. W.; Rice, R. R.; Specht, A. P. // Journal of Applied Physics;4/1/1986, Vol. 59 Issue 7, p2293 

    Presents a study which investigated the relationship between spontaneous and stimulated emission from a variety of aluminum gallium arsenide-gallium arsenide double-hetrostructure laser diodes. Characteristic temperature of spontaneous emission; Discussion of the spontaneous emission curves of...

  • Reliability of aluminum-free 808 nm high-power laser diodes with uncoated mirrors. Eliashevich, I.; Diaz, J. // Applied Physics Letters;6/5/1995, Vol. 66 Issue 23, p3087 

    Examines the reliability of aluminum-free InGaAsP/gallium arsenide high-power diode lasers emitting at 808 nanometer wavelength. Output power of quasicontinuous wave obtained from a one centimeter-wide laser bar; Degradation of a single-stripe diode without mirror-coating tested at 40 degrees...

  • Watt-range, coherent, uniphase powers from phase-locked arrays of antiguided diode lasers. Botez, D.; Jansen, M.; Mawst, L.J.; Peterson, G.; Roth, T.J. // Applied Physics Letters;5/13/1991, Vol. 58 Issue 19, p2070 

    Reports on the optimization of twenty-element near-resonant AlGaAs/GaAs arrays of antiguided diode lasers for maximum intermodal discrimination and large Strehl ratio. Antiguided-array structure types used; Major improvements made over previous structures; Intermodal discrimination critical in...

  • Continuous-wave operation and mirror loss of a U-shaped GaAs/AlGaAs laser diode with two totally reflecting mirrors. Shimokawa, Fusao; Tanaka, Hidenao; Sawada, Renshi; Hara, Shigeji // Applied Physics Letters;4/23/1990, Vol. 56 Issue 17, p1617 

    A U-shaped GaAs/AlGaAs laser diode (LD) with totally reflecting mirrors is fabricated. Reactive fast atom beam etching technique with Cl2 gas is applied to fabricate the totally reflecting mirrors. Continuous-wave operation of the U-shaped LD with two totally reflecting mirrors is achieved using...

  • 5 W GaAs/GaAlAs laser diodes with a reactive ion etched facet. Ou, S. S.; Yang, J. J.; Jansen, M. // Applied Physics Letters;10/29/1990, Vol. 57 Issue 18, p1861 

    GaAs/GaAlAs laser diodes with reactive ion etched facets have been demonstrated for the first time with high output powers (5 W from 100-μm-wide apertures), high output power density (15 MW/cm2), and high slope efficiencies (66%) in junction-up configuration under quasi-cw operation. Mirror...

  • Low-threshold gain-guided coupled-stripe quantum well diode lasers by laser-assisted processing. Epler, J. E.; Burnham, R. D.; Paoli, T. L. // Applied Physics Letters;8/24/1987, Vol. 51 Issue 8, p558 

    The first coupled-stripe laser diodes fabricated by a laser-assisted process are reported. In this process, a focused laser beam is scanned across AlGaAs-GaAs heterostructure material to pattern a shallow resistive region in the GaAs cap layer. In this manner, the distribution of the injected...

  • Reduced threshold current in (111)B grown InGaAs/AlGaAs laser diodes: The positive role of piezoelectric effect. Deligeorgis, G.; Dialynas, G.; Hatzopoulos, Z.; Pelekanos, N. T. // Applied Physics Letters;3/19/2007, Vol. 90 Issue 12, p121126 

    The authors demonstrate that (111)B grown InGaAs/AlGaAs laser diodes outperform their (100) counterparts, in terms of lower threshold currents observed for all temperature and cavity lengths tested. A low temperature threshold current density as low as 15 A/cm2 has been observed in (111)B grown...

  • Effects of substrate polishing on double-heterostructure AlyGa1-yAs-AlxGa1-xAs lasers grown by molecular beam expitaxy. Caldwell, P. J.; Laidig, W. D.; Lin, Y. F.; Peng, C. K.; Magee, T. J.; Leung, C. // Journal of Applied Physics;2/1/1985, Vol. 57 Issue 3, p984 

    Presents a study which examined the relationship of the performance of a double-heterostructure (DH) laser with various polishing techniques used for gallium arsenide (GaAs) substrates preparation. Description of the process of polishing; Fabrication of broad-area laser diodes; Results for DH...

  • 1.3 μm continuous-wave GaInNAs/GaAs distributed feedback laser diodes. Gollub, D.; Fischer, M.; Kamp, M.; Forchel, A. // Applied Physics Letters;12/2/2002, Vol. 81 Issue 23, p4330 

    GaInNAs/GaAs single-quantum-well lasers were grown by solid-source molecular-beam epitaxy using a radio-frequency source for nitrogen activation. Distributed feedback has been realized by a metal grating arranged laterally to the laser ridge. Single-mode emission between 1271 and 1304 nm could...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics