Room-temperature cw operation of InGaP/InGaAlP visible light laser diodes on GaAs substrates grown by metalorganic chemical vapor deposition

Ishikawa, Masayuki; Ohba, Yasuo; Sugawara, Hideto; Yamamoto, Motoyuki; Nakanisi, Takatosi
January 1986
Applied Physics Letters;1/20/1986, Vol. 48 Issue 3, p207
Academic Journal
Room-temperature cw operation for InGaP/InGaAlP double heterostructure (DH) laser diodes on GaAs substrates was achieved for the first time. The DH wafers were grown by low-pressure metalorganic chemical vapor deposition using methyl metalorganics. A lasing wavelength of 679 nm and a threshold current of 109 mA at 24 °C were obtained for an inner stripe structure laser diode with a 250-μm-long and 7-μm stripe geometry. The laser operated at up to 51 °C. The characteristic temperature T0 was 87 K at around room temperature. The lowest threshold current density, 5.0 kA/cm2, was obtained with a 20-μm stripe width laser diode under room-temperature pulsed operation.


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