Nitrogen effect on oxygen precipitation in Czochralski silicon

Shimura, F.; Hockett, R. S.
January 1986
Applied Physics Letters;1/20/1986, Vol. 48 Issue 3, p224
Academic Journal
The nitrogen effect on enhancement of oxygen precipitation in Czochralski-grown silicon wafers has been investigated by means of a preferential chemical etching technique and secondary ion mass spectroscopy. The precipitate enhancement is evident in an oxygen out-diffused region in which oxygen precipitation does not normally occur. Incorporation of the nitrogen atoms in substitutional sites to generate very stable microdefects in Czochralski-grown silicon crystals can explain the nitrogen effect on oxygen precipitation.


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