TITLE

Growth law for disk precipitates, and oxygen precipitation in silicon

AUTHOR(S)
Hu, S. M.
PUB. DATE
January 1986
SOURCE
Applied Physics Letters;1/13/1986, Vol. 48 Issue 2, p115
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
It is shown that the energetically optimum shape of a precipitate which generates strains in the host lattice is a disc with a thickness that increases approximately with the square root of the size (disc radius). This relationship contravenes the two common assumptions that either the thickness or the aspect ratio stays unchanged during precipitate growth. From this relationship is derived a precipitate growth law of r∝t2/3. The results of the analysis are discussed with special reference to the growth of oxygen precipitates in silicon. The change in the morphology of oxygen precipitates with temperatures is also discussed.
ACCESSION #
9818894

 

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