TITLE

Deep level transient spectroscopy of hole defects in bulk-grown p-GaAs using Schottky barrier diodes

AUTHOR(S)
Auret, F. D.; Nel, M.
PUB. DATE
January 1986
SOURCE
Applied Physics Letters;1/13/1986, Vol. 48 Issue 2, p130
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Schottky barrier diodes were used to detect and study hole defects in bulk-grown p-type GaAs by deep level transient spectroscopy. Several defects with concentrations of 1013–1016/cm3 were studied. It was found that two of these defects, with electronic levels at Ev +0.42 eV and Ev +0.58 eV, have electronic properties that closely correspond to those of Cu- and Fe-related defects in GaAs. It is concluded that Schottky barrier diodes on p-GaAs can be very useful to detect and characterize typical metallic contaminants in GaAs.
ACCESSION #
9818886

 

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