TITLE

Picosecond time-of-flight measurements of minority electrons in GaAs/AlGaAs quantum well structures

AUTHOR(S)
Höpfel, R. A.; Shah, J.; Block, D.; Gossard, A. C.
PUB. DATE
January 1986
SOURCE
Applied Physics Letters;1/13/1986, Vol. 48 Issue 2, p148
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report direct measurements of drift velocities of photoexcited minority electrons in p-doped quantum well structures of GaAs/Al0.48Ga0.52As, using picosecond time-of-flight techniques. At low electric fields the electron mobility is strongly reduced by electron-hole scattering. At high fields (>8 kV/cm) negative differential mobility is observed, which we interpret as real-space and valley transfer of hot electrons into the X valley of Al0.48Ga0.52As. From the photoluminescence spectra the carrier temperatures at which the transfer effects occur are determined.
ACCESSION #
9818874

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics