TITLE

Enhanced ‘‘tail’’ diffusion of phosphorus and boron in silicon: Self-interstitial phenomena

AUTHOR(S)
Morehead, F. F.; Lever, R. F.
PUB. DATE
January 1986
SOURCE
Applied Physics Letters;1/13/1986, Vol. 48 Issue 2, p151
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
It is well known that high surface concentration phosphorus diffusion leads to deeply penetrating ‘‘tails’’ in its concentration profile. At 700 °C the tail diffusivity exceeds that of low concentration phosphorus by a factor of 1000. Less spectacular, but very significant tailing also affects boron, making the conventional models contained in commonly available process simulation programs quite inaccurate for high concentrations of boron. We show that the observed tailing can be accounted for by a model whose central assumption is the local equality of dopant and oppositely directed defect fluxes.
ACCESSION #
9818871

 

Related Articles

  • Black phosphorus with a unique rectangular shape and its anisotropic properties. Hsiao, Yao; Chang, Po-Yen; Fan, Kai-Lin; Hsu, Ning-Chun; Lee, Si-Chen // AIP Advances;Oct2018, Vol. 8 Issue 10, pN.PAG 

    Black Phosphorus (BP) is a 2D material with high hole mobility. However, due to its fast degradation property under ambient air, fast crystal orientation determination is required for the fabrication of BP transistor along the crystal orientation with the highest mobility. In this paper, a...

  • Phosphorus and boron diffusion in silicon under equilibrium conditions. Christensen, J. S.; Radamson, H. H.; Kuznetsov, A. Yu.; Svensson, B. G. // Applied Physics Letters;4/7/2003, Vol. 82 Issue 14, p2254 

    The intrinsic diffusion of phosphorus and boron in high-purity epitaxial silicon films has been studied. Phosphorus diffusion in a wide temperature range (810 to 1100 °C) revealed diffusion coefficients with an Arrhenius behavior exhibiting an activation energy of 2.74 ± 0.07 eV and a...

  • Accurate measurements of the intrinsic diffusivities of boron and phosphorus in silicon. Haddara, Yaser M.; Folmer, Brennan T.; Law, Mark E.; Buyuklimanli, Temel // Applied Physics Letters;9/25/2000, Vol. 77 Issue 13 

    All activity in modeling transient diffusion behavior relies on knowledge of the inert intrinsic diffusivities of dopants in Si. The measurements upon which these values are based were conducted over 15 years ago. Since then, the quality of wafers used in industrial applications has...

  • Simulation of boron, phosphorus, and arsenic diffusion in silicon based on an integrated... Uematsu, Masashi // Journal of Applied Physics;9/1/1997, Vol. 82 Issue 5, p2228 

    Presents a description of boron, phosphorus and arsenic diffusion stripped down to the essential parameters needed to elucidate the mechanism. Point defects that contribute to dopan diffusion; Vacancy mechanism governing the diffusion in the plateau region; Appearance of the kink-and-tail...

  • Charge-state changes of substitutional nitrogen impurities in silicon induced by additional impurities and defects. Itoh, Hisayoshi; Murakami, Kouichi; Takita, Kôki; Masuda, Kohzoh // Journal of Applied Physics;5/15/1987, Vol. 61 Issue 10, p4862 

    Presents a study which reported the effects of introducing phosphorus (P), boron (B) and oxygen (O) impurities into pulsed-laser annealed silicon (Si:N) system. Effect of nitrogen (N) impurities on silicon; Experimental procedure; Result of electron spin resonance spectra of Si:N,...

  • The steady-state model for coupled defect-impurity diffusion in silicon. Morehead, F. F.; Lever, R. F. // Journal of Applied Physics;12/1/1989, Vol. 66 Issue 11, p5349 

    Presents a study which featured a model that proposed to explain tails in the diffusion profiles of high-concentration boron and phosphorus in silicon. Equations that illustrate a system with interstitial silicon and its concentration; Comparison with other models; Details on gold diffusion.

  • Temperature and time dependence of B and P diffusion in Si during surface oxidation. Packan, P. A.; Plummer, J. D. // Journal of Applied Physics;10/15/1990, Vol. 68 Issue 8, p4327 

    Presents information on a study which measured the diffusion of boron and phosphorus in silicon during surface oxidation in dry oxide as a function of time and temperature. Measurement of the dopant concentration profiles using capacitance-voltage profiling; Results of silicidation experiments...

  • Dopant diffusion in silicon in the presence of other dopants: A new predictive approach based on modeling boron and phosphorous diffusion in germanium-rich regions of silicon. Aronowitz, Sheldon // Journal of Applied Physics;4/1/1991, Vol. 69 Issue 7, p3901 

    Provides information on a study concerning the effect of dopant-dopant interaction on diffusion in silicon. Observation on the diffusion of boron and phosphorous in silicon; Discussion of the process of dopant-dopant interaction; Mechanisms of germanium-rich regions of silicon.

  • Deep diffusion doping of macroporous silicon. Astrova, E. V.; Voronkov, V. B.; Grekhov, I. V.; Nashchekin, A. V.; Tkachencko, A. G. // Technical Physics Letters;Dec99, Vol. 25 Issue 12, p958 

    An investigation is made of the diffusion of boron and phosphorus impurities in macroporous silicon with a regular structure of deep cylindrical pores, for which through doping of the walls was achieved. The ∼ 150 µm layers obtained were quasiuniformly doped and had a planar diffusion...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics