Growth process in atomic layer epitaxy of Zn chalcogenide single crystalline films on (100)GaAs

Yao, Takafumi; Takeda, Toshihiko
January 1986
Applied Physics Letters;1/13/1986, Vol. 48 Issue 2, p160
Academic Journal
Atomic layer epitaxy of zinc chalcogenide single crystalline films on a (001) GaAs substrate is studied. It is observed that the average thickness per one cycle of opening and closing the shutters of the constituent elements corresponds to one monolayer thickness. The initial and successive stages of the epitaxy are investigated by reflection high-energy electron diffraction. Three-dimensional growth mechanism dominates at the initial stage of the heteroepitaxy, while pseudo-two-dimensional growth mechanism dominates after the deposition of more than 1000 monolayers. However, the growth of ZnSe on ZnTe and vice versa is dominated by the two-dimensional growth mechanism.


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