TITLE

Superior characteristics of nitridized thermal oxide grown on polycrystalline silicon

AUTHOR(S)
Chen, Chiou-Feng; Wu, Ching-Yuan
PUB. DATE
January 1986
SOURCE
Applied Physics Letters;1/13/1986, Vol. 48 Issue 2, p165
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Polycrystalline silicon dioxide (poly-oxide) nitridized at high temperatures in ammonia ambient has been characterized by using ramp current-voltage (I-V) and constant current stressed voltage-time (V-t) measurements. It is found that the nitridized poly-oxide has less leakage current and stronger dielectric field strength as compared to conventional poly-oxide. These advantages are attributed to the slightly increased trapping effect and the less severe asperity effect of the nitridized poly-oxide. It has been shown that the nitridized poly-oxide is a good material for applications in high density electrically erasable and programmable read only memory (EEPROM) devices.
ACCESSION #
9818863

 

Related Articles

  • Effects of gate material on Fowler-Nordheim stress induced thin silicon dioxide degradation under negative gate bias. Samanta, Piyas; Chan, Mansun // Journal of Applied Physics;8/1/2004, Vol. 96 Issue 3, p1547 

    An exhaustive theoretical investigation on the role of gate material as well as commonly used metal deposition processes [viz., electron beam (e-beam) evaporation and thermal evaporation] on high-field stress-induced dielectric breakdown and/or degradation of identically thick (8–10 nm)...

  • Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress. Iglesias, V.; Lanza, M.; Zhang, K.; Bayerl, A.; Porti, M.; Nafría, M.; Aymerich, X.; Benstetter, G.; Shen, Z. Y.; Bersuker, G. // Applied Physics Letters;9/5/2011, Vol. 99 Issue 10, p103510 

    The evolution of the electrical properties of HfO2/SiO2/Si dielectric stacks under electrical stress has been investigated using atomic force microscope-based techniques. The current through the grain boundaries (GBs), which is found to be higher than thorough the grains, is correlated to a...

  • CMP of fluorinated silicon dioxide: Is it necessary and feasible? Tseng, Wei-Tsu; Hsieh, Yuan-Tsu // Solid State Technology;Feb97, Vol. 40 Issue 2, p61 

    Focuses on the use of low-permittivity fluorinated silicon dioxides for inter-metal dielectric applications. Effects of fluorine ions; Chemical mechanical polishing (CMP) oxide-removal rates; Post-CMP effects on the oxides.

  • Predicting the market in low-k dielectrics. Corbett, Michael; Davis, John C. // Solid State Technology;Apr2000, Vol. 43 Issue 4, p38 

    Predicts the low-k dialectrics market outlook for the next five years after April 2000. Factors that led to the growth in the market; Classes of materials for interlayer dielectric applications; Reason for the projected coexistence of carbon-doped silicon dioxide and spin-on deposition processes.

  • Polycrystalline GaSb films prepared by the coevaporation technique. Ghosh, D.; Ghosh, B.; Hussain, S.; Bhar, R.; Pal, A. // Applied Physics A: Materials Science & Processing;Jun2014, Vol. 115 Issue 4, p1251 

    Gallium antimonide (GaSb) films were deposited onto fused silica and n-Si (100) substrates by coevaporating Ga and Sb from appropriate evaporation sources. The films were polycrystalline in nature. The size and the shape of the grains varied with the change in the substrate temperature during...

  • Thermal emission of trapped holes in thin SiO2 films. Lu, Yi; Sah, Chih-Tang // Journal of Applied Physics;9/1/1995, Vol. 78 Issue 5, p3156 

    Examines a nonradiation measurement of the density of states of two hole traps near the oxide valence band edge in pure and thin silicon dioxide films. Use of polycrystalline silicon gate; Oxide thickness dependences of the density of the two charged oxide hole traps; Physical origins of the...

  • Dielectric properties of (1–x)[0.7PbZrO[sub 3]·0.3K[sub 0.5]Bi[sub 0.5]TiO[sub 3]]·xSrTiO[sub 3] solid solutions in the vicinity of phase transitions. Korotkov, L. N.; Rogova, S. P.; Pavlova, N. G. // Technical Physics;Mar99, Vol. 44 Issue 3, p295 

    The dielectric properties of polycrystalline (1–x)[0.7PbZrO[sub 3]·0.3K[sub 0.5]Bi[sub 0.5]TiO[sub 3]]·xSrTiO[sub 3] solid solutions, where x=0–0.7, are studied in the temperature range 150–600 K. Systematic spreading of the ferroelectric phase transition with...

  • Sintered alumina with low dielectric loss. Alford, Neil McN.; Penn, Stuart J. // Journal of Applied Physics;11/15/1996, Vol. 80 Issue 10, p5895 

    Presents a study which showed that high-purity polycrystalline sintered alumina can achieve low dielectric loss. Information on alumina; Experimental procedures; Conclusions.

  • Dielectric and piezoelectric enhancement due to 90° domain rotation in the tetragonal phase of Pb(Mg[sub 1/3]Nb[sub 2/3])O[sub 3]-PbTiO[sub 3]. Koo, T. Y.; Cheong, S-W. // Applied Physics Letters;6/3/2002, Vol. 80 Issue 22, p4205 

    The anomalous enhancement in dielectric (∈>6000) and piezoelectric constant (d[sub 33] > 600 pC/N) in the tetragonal side (χ=35%) of morphotropic phase boundary (MPB) has been observed in polycrystalline (1-χ)Pg(Mg[sub l/3]Nb[sub 2/3])O[sub 3]-χPbTiO[sub 3] (PMN-PT). On the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics