TITLE

Laser selective deposition of GaAs on Si

AUTHOR(S)
Bedair, S. M.; Whisnant, J. K.; Karam, N. H.; Tischler, M. A.; Katsuyama, T.
PUB. DATE
January 1986
SOURCE
Applied Physics Letters;1/13/1986, Vol. 48 Issue 2, p174
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaAs films have been selectively deposited on Si substrates by laser induced chemical vapor deposition. An Ar+ laser was used to provide the required local heating on an otherwise relatively cool substrate to deposit GaAs spots and write GaAs lines. The deposition parameters were adjusted to deposit films with diameters in the range 1.5–500 μm and thicknesses in the range of 200 Å to several microns. Optical, chemical, and structural properties of the selectively deposited films have been studied. This technique can have potential applications in integrating optical and electronic devices on Si substrates.
ACCESSION #
9818856

 

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