TITLE

<100> and <111> textures in unseeded, strip heater recrystallized silicon-on-insulator

AUTHOR(S)
Lee, El Hang
PUB. DATE
January 1986
SOURCE
Applied Physics Letters;1/13/1986, Vol. 48 Issue 2, p180
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The graphite strip heater technique was used to obtain strongly preferred <100> or <111> textures for thin-film silicon recrystallized on amorphous oxide and nitride substrates. Whereas <100> textures have been obtained in the liquid phase, <111> textures have been obtained in the solid phase at near-melting temperatures. Films of <100> orientation displayed the usual sub-boundaries, but <111> films revealed grainy textures mixed with pond ripple features. The lateral epitaxy model and the birth and spread model have been useful in distinguishing the two growth mechanisms. Films on Si3N4 substrates had characteristics similar to those on SiO2 substrates.
ACCESSION #
9818851

 

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