Generation and detection of 15-ps light pulses in the 1.2–1.3-μm wavelength range by semiconductor lasers and detectors

Bimberg, D.; Böttcher, E. H.; Ketterer, K.; Vollmer, H. P.; Beneking, H.; Roentgen, P.
January 1986
Applied Physics Letters;1/13/1986, Vol. 48 Issue 2, p83
Academic Journal
The generation of 15-ps light pulses at 1.23 and 1.26 μm having 200 mW peak power at a repetition rate of up to 10 MHz from directly modulated unbiased V-groove InxGa1-xAsyP1-y lasers is reported. Specially designed avalanche generators are employed for modulation of the laser injection current. The light pulses are analyzed using microstructured Ge photodetectors having a response of 62 ps at full width half-maximum. A deconvolution technique based on a theoretical analysis of the complete circuit of the detection system is applied to reduce the large error occurring normally when the characteristics of fast pulses are determined from the response of much slower detectors. This technique is proved by independent experiments to hold. A spontaneous lifetime of 1.5 ns of the charge carriers in the active layer of the laser is determined from the measured delay times between the optical and electrical pulses.


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