Greatly reduced losses for small-radius bends in Ti:LiNbO3 waveguides

Korotky, S. K.; Marcatili, E. A. J.; Veselka, J. J.; Bosworth, R. H.
January 1986
Applied Physics Letters;1/13/1986, Vol. 48 Issue 2, p92
Academic Journal
We report the demonstration of a new concept that permits the fabrication of low-loss Ti:LiNbO3 waveguide bends with radii much smaller than previously achieved.


Related Articles

  • Measures of internal spatial modes and local propagation properties in optical waveguides. Rhodes, G.H. Vander; Goldberg, B.B. // Applied Physics Letters;10/18/1999, Vol. 75 Issue 16, p2368 

    Studies the internal spatial modes and local propagation properties in optical waveguides. Use of optical guided-wave devices for routing and control applications in the areas of optical communications and networking; Variation with polarization in the near-field scanning optical microscopy (NSOM).

  • Wavelength by the slice. Blake, Pat // Telephony;09/27/99, Vol. 237 Issue 13, p36 

    Focuses on the emergence of managed wavelength services. Advantages of this micromanaged approach to optical networking; Implication of the limited number of domestic carriers prepared to unveil managed wavelength services.

  • GaN-based waveguide devices for long-wavelength optical communications. Hui, R.; Taherion, S.; Wan, Y.; Li, J.; Jin, S. X.; Lin, J. Y.; Jiang, H. X. // Applied Physics Letters;3/3/2003, Vol. 82 Issue 9, p1326 

    Refractive indices of Al[sub x]Ga[sub 1-x]N with different Al concentrations have been measured in infrared wavelength regions. Single-mode ridged optical waveguide devices using GaN/AlGaN heterostructures have been designed, fabricated, and characterized for operation in 1550 nm wavelength...

  • Planar splitters are the optimal choice for passive optical networks. Lee, Pete // Lightwave;Nov2003, Vol. 20 Issue 11, p36 

    Discusses the advantages of using planar-waveguide splitters in passive optical networks (PON). PON requirements that planar splitters are able to satisfy; PON features that reduce operating cost; Fused biconic taper-based PON splitters.

  • The field radiated by a single-mode optical waveguide excited by a field with a complex amplitude-phase spatial distribution. Dubrovin, V. // Journal of Communications Technology & Electronics;Dec2012, Vol. 57 Issue 12, p1249 

    A single-mode optical waveguide excited by a field having a complex amplitude-phase spatial distribution is considered. The field formed at the output of the waveguide is investigated. It is shown that the field structure at the input of the waveguide is transformed at its output into a simple...

  • Reconstruction of parameters of an adlayer on the surface of a channel optical waveguide. Primak, I.U.; Sotskaya, L.I. // Optical & Quantum Electronics;Feb2003, Vol. 35 Issue 3, p275 

    A simple solution of an inverse problem of reconstruction of thickness, permittivity and surface coverage of an adlayer disposed on the surface of a channel optical waveguide is proposed and substantiated theoretically. It is shown that the reconstruction errors for the parameters of the adlayer...

  • All-optical modulator is capable of terahertz speeds. Hochberg, Michael // Laser Focus World;Nov2006, Vol. 42 Issue 11, p11 

    The article claims that intensity modulation at frequencies in excess of 1 terahertz could be obtained by directly measuring time-domain intensity modulation at 10 GHz as demonstrated by the researchers at the California Institute of Technology. It explains that integrating the optical polymer...

  • High-index-contrast Optical Waveguides on Silicon. Säynätjoki, Antti; Arpiainen, Sanna; Ahopelto, Jouni; Lipsanen, Harri // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p1537 

    Optical waveguides with a high refractive index contrast were fabricated on silicon-on-insulator (SOI) and polysilicon. The attenuation of 2dB/cm was achieved for SOI, and 11 dB/cm for hydrogenated polysilicon waveguides. Unlike in SOI waveguides, where the main contribution to attenuation is...

  • Polarization dependent loss in III-nitride optical waveguides for telecommunication devices. Iizuka, Norio; Kaneko, Kei; Suzuki, Nobuo // Journal of Applied Physics;5/1/2006, Vol. 99 Issue 9, p093107 

    Excess polarization dependent loss (PDL) was investigated for GaN waveguide devices grown by molecular beam epitaxy (MBE). The loss for transverse magnetic polarization strongly depended on the edge dislocation density in the crystal, because the dislocations capture electrons and act like a...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics