Hall-effect measurements in p-type InGaAs/GaAs strained-layer superlattices

Fritz, I. J.; Dawson, L. R.; Drummond, T. J.; Schirber, J. E.; Biefeld, R. M.
January 1986
Applied Physics Letters;1/13/1986, Vol. 48 Issue 2, p139
Academic Journal
We report, for the first time, temperature-dependent Hall data for holes in modulation-doped In0.2Ga0.8As/GaAs strained-layer superlattices. Samples with (compressive) planar strains of -0.5% to -1.2% in the InGaAs quantum wells were used, providing a range of configurations for the two (overlapping) sets of valence-band quantum wells derived from the bulk heavy- and light-hole bands. All samples exhibit transfer of holes into the InGaAs quantum wells at low temperature; however, the sample with the least strain shows evidence for gradual carrier freeze-out over a wide range of temperature.


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