TITLE

Shallow p-type layers in InP by Hg implantation

AUTHOR(S)
Favennec, P. N.; L’Haridon, H.; Roquais, J. M.; Salvi, M.; Le Cleach, X.; Gouskov, L.
PUB. DATE
January 1986
SOURCE
Applied Physics Letters;1/13/1986, Vol. 48 Issue 2, p154
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Ion implantation of mercury in n-type and semi-insulating indium phosphide is reported in InP. We show how mercury behaves in InP in terms of type of dopant, electrical activity, and diffusivity. Implanted mercury impurity behaves as an acceptor dopant in InP. Thin p-type layers have been obtained. Mercury profiles and electrical profiles show that mercury does not diffuse towards the bulk during annealing; therefore, mercury implantation can be a valuable technique in realizing shallow p-type layers in indium phosphide.
ACCESSION #
9818817

 

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