Infrared spectroscopy of interfaces in amorphous hydrogenated silicon/silicon nitride superlattices

Abeles, B.; Yang, L.; Persans, P. D.; Stasiewski, H. S.; Lanford, W.
January 1986
Applied Physics Letters;1/13/1986, Vol. 48 Issue 2, p168
Academic Journal
Infrared and atomic composition measurements of a-Si[ATOTHER]@B:[/ATOTHER] H/a-SiNx[ATOTHER]@B:[/ATOTHER] H superlattices as a function of repeat distance show ∼1×1015 cm-2 extra hydrogen bonded to Si at the interface formed when a-Si:H is deposited on a-SiNx[ATOTHER]@B:[/ATOTHER] H. The H distribution peaks in the first monolayer and decays in the a-Si:H layer over a distance of ∼19 Å. The hydrogen relieves the large lattice mismatch between the two layers and pacifies defects.


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