TITLE

Oxidation resistant sol-gel derived silicon oxynitride thin films

AUTHOR(S)
Brow, Richard K.; Pantano, Carlo G.
PUB. DATE
January 1986
SOURCE
Applied Physics Letters;1/6/1986, Vol. 48 Issue 1, p27
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Silicon oxynitride films, made by reacting porous, sol-gel derived silicon dioxide with ammonia, were oxidized in dry O2 between 800 and 1000 °C. Film oxidation was characterized by ellipsometry and secondary ion mass spectrometry. Increasing the nitrogen content of the film increased oxidation resistance of the film.
ACCESSION #
9818797

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics