TITLE

New laterally selective growth technique by metalorganic chemical vapor deposition

AUTHOR(S)
Bedair, S. M.; Tischler, M. A.; Katsuyama, T.
PUB. DATE
January 1986
SOURCE
Applied Physics Letters;1/6/1986, Vol. 48 Issue 1, p30
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Laterally selective growth of III-V compounds has been successfully demonstrated by metalorganic chemical vapor deposition. This was achieved by using a specially designed growth chamber and susceptor that allows the substrate to move with respect to a stationary GaAs or Si mask. We have used this technique to selectively deposit GaAs1-xPx with different values of x and a GaAs-GaAsP superlattice on a single GaAs substrate. We have also selectively grown multiple color light-emitting diodes on a GaAs substrate.
ACCESSION #
9818795

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics