TITLE

Hydrogen radical assisted chemical vapor deposition of ZnSe

AUTHOR(S)
Oda, S.; Kawase, R.; Sato, T.; Shimizu, I.; Kokado, H.
PUB. DATE
January 1986
SOURCE
Applied Physics Letters;1/6/1986, Vol. 48 Issue 1, p33
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Hydrogen radicals are employed in the growth of ZnSe. They react with starting gases to form long-lifetime precursors for deposition. The major advantages of hydrogen radical assisted chemical vapor deposition over the existing methods include (1) low-temperature growth, (2) plasma-free substrate, (3) selective precursor formation, (4) substrate cleaning effect, (5) rearrangement of atoms on the growing surface, and (6) passivation of grain boundaries or dangling bonds. Highly (111) axis oriented ZnSe films have been prepared on glass substrates at 200 °C. The temperature dependence of the electrical conductivity in the dark and the photoconductive response suggest low density of traps. Epitaxial ZnSe films on GaAs substrates have been obtained at 200 °C.
ACCESSION #
9818792

 

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