AlGaAs/GaAs(111) heterostructures grown by molecular beam epitaxy

Vina, L.; Wang, W. I.
January 1986
Applied Physics Letters;1/6/1986, Vol. 48 Issue 1, p36
Academic Journal
We have grown AlGaAs/GaAs heterostructures on (111) oriented GaAs substrates by molecular beam epitaxy. Materials with good optical and electrical properties, including mobility enhancement in two-dimensional electron and hole gases, have been obtained for the first time.


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