Diffusion of Ag and Hg at the Ag/(Hg, Cd)Te interface

Friedman, D. J.; Carey, G. P.; Shih, C. K.; Lindau, I.; Spicer, W. E.; Wilson, J. A.
January 1986
Applied Physics Letters;1/6/1986, Vol. 48 Issue 1, p44
Academic Journal
The room-temperature Ag/(Hg, Cd)Te interface has been studied in ultrahigh vacuum with x-ray and ultraviolet photoelectron spectroscopy. The Ag evaporated onto (Hg, Cd)Te diffuses 102–103 Å into the bulk of the semiconductor, displacing Hg as it does so. The bands bend 0.05–0.1 eV upward at low coverage. No significant chemical reaction is observed.


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