Characterization of beam-recrystallized Si films and their Si/SiO2 interfaces in silicon-on-insulator structures

Vu, D. P.; Pfister, J. C.
January 1986
Applied Physics Letters;1/6/1986, Vol. 48 Issue 1, p50
Academic Journal
A technique equivalent to the conventional C(V) measurement is developed for silicon-on-insulator technology. A depletion mode transistor is used. The ID(VG) characteristic and its derivative, i.e., the transconductance, allow the determination of the doping of the Si film, the oxide thickness, the fixed oxide charge at both Si/SiO2 interfaces. The device can be used in process control without any extra process steps.


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