TITLE

Characterization of beam-recrystallized Si films and their Si/SiO2 interfaces in silicon-on-insulator structures

AUTHOR(S)
Vu, D. P.; Pfister, J. C.
PUB. DATE
January 1986
SOURCE
Applied Physics Letters;1/6/1986, Vol. 48 Issue 1, p50
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A technique equivalent to the conventional C(V) measurement is developed for silicon-on-insulator technology. A depletion mode transistor is used. The ID(VG) characteristic and its derivative, i.e., the transconductance, allow the determination of the doping of the Si film, the oxide thickness, the fixed oxide charge at both Si/SiO2 interfaces. The device can be used in process control without any extra process steps.
ACCESSION #
9818781

 

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