TITLE

Observation of new common emissions in GaAs produced by ion implantation of four acceptor impurities

AUTHOR(S)
Takeuchi, Yoshinori; Makita, Yunosuke; Kudo, Kazuhiro; Nomura, Toshio; Tanaka, Hideki; Irie, Katsuhiro; Ohnishi, Nobukazu
PUB. DATE
January 1986
SOURCE
Applied Physics Letters;1/6/1986, Vol. 48 Issue 1, p59
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Photoluminescence studies of C+, Mg+, Zn+, and Cd+ ion-implanted GaAs layers were carried out at 2 K. Two conspicuous emissions denoted by g and [g-g] were observed to be situated between bound exciton and band to acceptor emissions. It was found that these two are common emissions among the above acceptor impurities, and that they can be explicitly observed only when the background impurity concentration is extremely small.
ACCESSION #
9818776

 

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