Light-induced metastable defects in amorphous silicon: The role of hydrogen

Stutzmann, M.; Jackson, W. B.; Smith, A. J.; Thompson, R.
January 1986
Applied Physics Letters;1/6/1986, Vol. 48 Issue 1, p62
Academic Journal
The role of hydrogen in the creation and annealing kinetics of the light-induced metastable defects in hydrogenated amorphous silicon is investigated using electron spin resonance. Deuterated and hydrogenated films exhibited the same defect creation rate and nearly identical distributions of annealing energies. Implications of these results for various microscopic models for the creation of metastable defects are discussed.


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