TITLE

Nondestructive depth profiling of carrier lifetimes in full silicon wafers

AUTHOR(S)
Guidotti, D.; Batchelder, J. S.; Van Vechten, J. A.; Finkel, A.
PUB. DATE
January 1986
SOURCE
Applied Physics Letters;1/6/1986, Vol. 48 Issue 1, p68
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We demonstrate for the first time that the phase shift associated with amplitude modulated, near band-edge photoluminescence from Si at room temperature can be used to map defects and carrier lifetimes over full wafers with depth sensitivity.
ACCESSION #
9818769

 

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