Highly efficient multiple emitter index guided array lasers fabricated by silicon impurity induced disordering

Thornton, R. L.; Burnham, R. D.; Paoli, T. L.; Holonyak, N.; Deppe, D. G.
January 1986
Applied Physics Letters;1/6/1986, Vol. 48 Issue 1, p7
Academic Journal
We describe the fabrication of closely spaced arrays of buried heterostructure semiconductor lasers by the process of silicon impurity induced disordering. These devices have the low threshold currents which are associated with buried heterostructure lasers, as well as high overall device efficiency. The device we have analyzed for this letter exhibits a threshold current of 53 mA, differential quantum efficiency of 62%, and a total power conversion efficiency of 43% when operating at a power output level of 250 mW. These numbers indicate that this technology is quite promising for the fabrication of high power semiconductor laser arrays.


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