TITLE

Dependence of photoetching rates of polymers at 193 nm on optical absorption depth

AUTHOR(S)
Cole, H. S.; Liu, Y. S.; Philipp, H. R.
PUB. DATE
January 1986
SOURCE
Applied Physics Letters;1/6/1986, Vol. 48 Issue 1, p76
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Mixtures of poly(methyl methacrylate) and poly(α-methyl styrene) were prepared and their optical absorption coefficients at 193 nm were measured. A study of photoetching rate of these polymeric materials using an ArF excimer laser at 193 nm shows two regions of distinctly different etching characteristics. At relatively high fluences (>300 mJ/cm2) the photoetch rate decreased with increasing absorption in the polymer films, while at lower fluences, an optimum range of absorption coefficients was found to give the maximum photoetching rate.
ACCESSION #
9818763

 

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