Relationship between secondary defects and electrical activation in ion-implanted, rapidly annealed GaAs

Pearton, S. J.; Hull, R.; Jacobson, D. C.; Poate, J. M.; Williams, J. S.
January 1986
Applied Physics Letters;1/6/1986, Vol. 48 Issue 1, p38
Academic Journal
The removal of lattice damage and consequent activation by rapid thermal annealing of implanted Si, Se, Zn, and Be in GaAs was investigated by capacitance-voltage profiling, Hall measurements, transmission electron microscopy (TEM), secondary ion mass spectrometry, and Rutherford backscattering. The lighter species show optimum electrical characteristics at lower annealing temperatures (∼850 °C for Be, ∼950 °C for Si) than the heavier species (∼900 °C for Zn, ∼1000 °C for Se), consistent with the amount of lattice damage remaining after annealing. TEM reveals the formation of high densities (107 cm-2) of dislocation loops after 800 °C, 3 s anneals of high dose (1×1015 cm-2) implanted GaAs, which are gradually reduced in density after higher temperature anneals (∼1000 °C). The remaining loops do not appear to affect the electrical activation or carrier mobility in the implanted layer, the latter being comparable to bulk values.


Related Articles

  • Abnormal solid solution and activation behavior in Ga-implanted Si(100). Matsuo, Jiro; Kato, Ichiro; Horie, Hiroshi; Nakayama, Noriaki; Ishikawa, Hajime // Applied Physics Letters;12/14/1987, Vol. 51 Issue 24, p2037 

    Rapid thermal annealing (RTA) and furnace annealing of Ga-implanted Si were studied. Ga atoms implanted into Si are located on substitutional lattice sites in concentration above the solid solubility limit after short-time and low-temperature annealing. Low-resistivity shallow p+ junctions can...

  • Microwave Synthesis of ZnSe. Sofronov, D.; Sofronova, E.; Starikov, V.; Baumer, V.; Matejchenko, P.; Galkin, S.; Lalajants, A.; Mamalis, A.; Lavrynenko, S. // Journal of Materials Engineering & Performance;Jun2013, Vol. 22 Issue 6, p1637 

    Research on ZnSe synthesis using microwave (MW) activation was conducted at varying concentrations of alkaline metal halogenides. It was established that ZnSe with a cubic lattice ( a = 5.665 ± 0.002 Å) was formed irrespective of synthesis conditions. The interaction between zinc and...

  • Low temperature formation and evolution of a 10 nm amorphous Ni–Si layer on [001] silicon studied by in situ transmission electron microscopy. Alberti, Alessandra; Bongiorno, Corrado; Mocuta, Cristian; Metzger, Till; Spinella, Corrado; Rimini, Emanuele // Journal of Applied Physics;May2009, Vol. 105 Issue 9, p093506-1 

    We investigated low temperature formation of a 10 nm thick amorphous Ni–Si layer after room temperature deposition of a 7 nm Ni layer on [001] Si, by in situ transmission electron microscopy analyses. Instead of a conventional time sequence of phases or an immediate formation of NiSi2...

  • Structure, bonding, and passivation of single carbon-related oxide hole traps near 4H-SiC/SiO2 interfaces. Ettisserry, D. P.; Goldsman, N.; Akturk, A.; Lelis, A. J. // Journal of Applied Physics;2014, Vol. 116 Issue 17, p174502-1 

    Single carbon interstitial in silicon dioxide, existing in carboxyl configuration, is shown to act as a border hole trap near 4H-SiC/SiO2 interface. Using density functional theory-based formation energy considerations, it is found to switch charge state between +2 and neutral as the 4H-SiC...

  • Low symmetry configurations of vacancy-oxygen complexes in irradiated silicon. Kusano, Y.; Saito, H.; Vlasenko, L. S.; Vlasenko, M. P.; Ohta, E.; Itoh, K. M. // Journal of Applied Physics;2015, Vol. 118 Issue 24, p245703-1 

    Two new electron paramagnetic resonance (EPR) spectra, labeled KU2 and KU3, emerge as a result of annealing of γ-ray irradiated silicon crystals in the temperature range 360-560°C. The EPR intensities of KU2 and KU3 increase in the upper range of the annealing temperature where the EPR...

  • Hall–Petch relationship in the nanocrystalline selenium prepared by crystallization from the amorphous state. Zhang, H. Y.; Hu, Z. Q.; Lu, K. // Journal of Applied Physics;3/15/1995, Vol. 77 Issue 6, p2811 

    Reports on the preparation of bulk nanocrystalline selenium specimens with various grain sizes by isothermally crystallizing as-quenched amorphous selenium. Technique used to study the structure of as-crystallized samples; List of annealing conditions, average grain size and hardness of the...

  • Selective Oxidation and Reactive Wetting of 1.0 Pct Si-0.5 Pct Al and 1.5 Pct Si TRIP-Assisted Steels. Bellhouse, E. M.; McDermid, J. R. // Metallurgical & Materials Transactions. Part A;Jun2010, Vol. 41 Issue 6, p1539 

    The effect of oxygen partial pressure on the selective oxidation and reactive wetting behavior of 1.0 pct Si-0.5 pct Al and 1.5 pct Si TRIP-assisted steels was studied. The annealing atmosphere affected the surface chemistry and the oxide morphology, which in turn affected reactive wetting....

  • Improvement of the wettability of SiMn IF-HSS by liquid zinc by controlling the dew point of the annealing gas atmosphere. Joonho Lee; Joongchul Park; Yunkyum Kim; Sun-Ho Jeon // Journal of Materials Science;Apr2010, Vol. 45 Issue 8, p2112 

    The wettability of low-carbon, 0.3 wt%Si–0.4 wt%Mn interstitial-free steel by liquid zinc at 450 °C was investigated using the dispensed sessile drop method. Before the wetting tests, the steel samples were annealed in a 15%H2–Ar gas atmosphere at three different dew points,...

  • The effects of the post-annealing atmosphere on the ultraviolet responsivity of n-ZnO/p-silicon nanowire heterojunction. Hai Zhou; Yongdan Zhu; Cheng Hu; Anyou Zuo // Applied Mechanics & Materials;2014, Vol. 716-717, p150 

    UV photoresponse of n-ZnO/p-Silicon nanowire (SiNW) photodiodes is investigated by varying post-treatment conditions. Based on spectral responsivity measurement, the responsivity of our photodiodes decreases with increasing the post-annealing temperature in vacuum atmosphere, and the biggest...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics