TITLE

Relationship between secondary defects and electrical activation in ion-implanted, rapidly annealed GaAs

AUTHOR(S)
Pearton, S. J.; Hull, R.; Jacobson, D. C.; Poate, J. M.; Williams, J. S.
PUB. DATE
January 1986
SOURCE
Applied Physics Letters;1/6/1986, Vol. 48 Issue 1, p38
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The removal of lattice damage and consequent activation by rapid thermal annealing of implanted Si, Se, Zn, and Be in GaAs was investigated by capacitance-voltage profiling, Hall measurements, transmission electron microscopy (TEM), secondary ion mass spectrometry, and Rutherford backscattering. The lighter species show optimum electrical characteristics at lower annealing temperatures (∼850 °C for Be, ∼950 °C for Si) than the heavier species (∼900 °C for Zn, ∼1000 °C for Se), consistent with the amount of lattice damage remaining after annealing. TEM reveals the formation of high densities (107 cm-2) of dislocation loops after 800 °C, 3 s anneals of high dose (1×1015 cm-2) implanted GaAs, which are gradually reduced in density after higher temperature anneals (∼1000 °C). The remaining loops do not appear to affect the electrical activation or carrier mobility in the implanted layer, the latter being comparable to bulk values.
ACCESSION #
9818745

 

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