Microscopic identification of defects propagating through the center of silicon and indium-doped liquid encapsulated Czochralski grown GaAs using x-ray topography

Scott, M. P.; Laderman, S. S.; Elliot, A. G.
December 1985
Applied Physics Letters;12/15/1985, Vol. 47 Issue 12, p1280
Academic Journal
Extended defects in 3 × 10[sup 18] cm[sup -3] Si-doped and 2 × 10[sup 19] cm[sup -3] In-doped GaAs grown by the liquid encapsulated Czochralski technique are investigated using x-ray topography and found to include straight and helicoidal dislocations propagating along the central axis of the ingot. These dislocations are not simply extensions of dislocations in the seed. The defect morphology is explained by strong interaction with native point defects and elastic strain associated with solute segregation at the growing interface.


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